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Method and apparatus for improving reflectivity optical grid of image sensor

A technology of image sensor and optical sensor, which is applied in radiation control devices, electric solid-state devices, semiconductor devices, etc., and can solve problems such as reducing quantum efficiency

Active Publication Date: 2015-12-09
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, light incident on the photosensor in FSICIS must pass through multiple layers of metals and dielectrics, which can absorb or scatter the impinging light, reducing the quantum efficiency

Method used

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  • Method and apparatus for improving reflectivity optical grid of image sensor
  • Method and apparatus for improving reflectivity optical grid of image sensor
  • Method and apparatus for improving reflectivity optical grid of image sensor

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Embodiment Construction

[0039] The making and using of the presently preferred embodiments are discussed in detail below. It will be appreciated, however, that the illustrative embodiments provide many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the embodiments, and these examples do not limit the scope of the description and do not define the scope of the appended claims.

[0040] The embodiments herein are illustrative examples, but do not limit the scope of the invention and do not limit the scope of the appended claims. Embodiments of the invention include methods and apparatus for forming an optical grid on a BSICIS device. By increasing the reflectivity of the optical grating, the signal-to-noise ratio can be improved, the absorption can be reduced, and the pixel interference can be reduced, so that the QE of the device is increased.

[0041] In an embodim...

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PUM

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Abstract

An improved reflectivity optical grid for image sensors. In an embodiment, a backside illuminated CIS device includes a semiconductor substrate having a pixel array area comprising a plurality of photosensors formed on a front side surface of the semiconductor substrate, each of the photosensors forming a pixel in the pixel array area; an optical grid material disposed over a backside surface of the semiconductor substrate, the optical grid material patterned to form an optical grid that bounds each of the pixels in the pixel array area and extending above the semiconductor substrate, the optical grid having sidewalls and a top portion; and a highly reflective coating formed over the optical grid, comprising a pure metal coating of a metal that is at least 99% pure, and a high-k dielectric coating over the pure metal coating that has a refractive index of greater than about 2.0. Methods are also disclosed.

Description

technical field [0001] The present invention relates to the field of semiconductors, and more particularly, the present invention relates to a method and apparatus for improving the reflectivity of an optical grid of an image sensor. Background technique [0002] The continued use of digital cameras, including cameras and video cameras, in portable devices places demands on image sensors. The use of cameras continues to increase on portable and battery pack powered devices such as tablet computers, smartphones, laptops and web-based video players. [0003] Early digital cameras relied primarily on charge-coupled devices ("CCDs") as image sensors. Recently, CMOS image sensors ("CIS") have become increasingly popular. CCIS technology provides digital devices as opposed to analog devices, and because CIS uses CMOS transistor or diode technology, additional digital processing and logic circuits can be easily incorporated into the imaging integrated circuit. The efficiency of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L31/022441H01L27/14623H01L27/14629H01L27/1464H01L31/022433H01L27/146
Inventor 张简旭珂陈科维王英郎
Owner TAIWAN SEMICON MFG CO LTD