Semiconductor laser drive circuit

Abstract

The invention provides a semiconductor laser device driving circuit which comprises a pulse shaping circuit used for shaping a wave form of an input narrow pulse signal and further compressing the pulse width of the narrow pulse signal, and a power amplification circuit connected with the pulse shaping circuit and used for performing power amplification on the narrow pulse signal output by the pulse shaping circuit through using high voltage, and for outputting a high level of the narrow pulse signal to an anode of a laser device and a low level to a cathode of the laser device after the power amplification. According to the semiconductor laser device driving circuit, the pulse width of the narrow pulse signal is further compressed by the pulse shaping circuit, and power of the narrow pulse signal is increased by the power amplification circuit, so that the semiconductor laser device driving circuit can meet requirements of high power and a narrow pulse.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a semiconductor laser drive circuit. Background technique [0002] With the rapid expansion of semiconductor laser application fields, it is gradually replacing He-Ne lasers in many aspects, and has been widely used in optical fiber communication, integrated optics, laser printing, laser beam scanning, optical disk storage technology, laser ranging, laser radar, pumps, etc. Pump solid-state lasers, pulse Doppler imaging, 3D image systems, fiber optic temperature sensors, etc. In many fields, especially in the field of laser detection and target recognition, the performance of target recognition, ranging accuracy, anti-interference and low power consumption all depend on the quality of laser pulses emitted by semiconductor lasers, and semiconductor lasers emit The optical pulse is directly modulated by the electrical pulse generated by the semiconductor laser drive c...

AI Technical Summary

Problems solved by technology

For the semiconductor laser drive circuit, although the pulse width can reach 5ns, it needs an external 50V high voltage power supply

In addition, there are other examples of driving circuits, the output current (power) is very large but the pulse width is on the order of several microseconds, which is not suitable for the needs of laser fuzes and other occasions

[0005] In the process of realizing the present invention, the applicant found that: in the prior art, there is a lack of a semiconductor laser drive circuit that satisfies the two requirements of high power and narrow pulse at the same time

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