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A triple-junction solar cell based on a patterned germanium substrate and its preparation method

A technology of solar cells and bottom cells, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of high epitaxial production cost, waste of substrates, and complicated processes

Active Publication Date: 2015-08-26
YANGZHOU CHANGELIGHT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These processes are complicated, not only the cost of epitaxial production is high, but also the substrate is wasted

Method used

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  • A triple-junction solar cell based on a patterned germanium substrate and its preparation method

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Effect test

Embodiment example 1

[0024] Such as figure 1 As shown, three solar cells based on patterned germanium substrate, including Ge bottom cell 100, In x Ga 1-x As medium battery 200, In y Ga 1-y P top cell 300, middle cell bottom cell tunnel junction 400 and middle cell top cell tunnel junction 500 connecting subcells together, and InGaP nucleation layer 700 and In x Ga 1-x As cap contact layer 600 .

[0025] The specific structure is as follows:

[0026] The growth substrate uses a patterned germanium substrate, p-type, with a doping concentration of 5×10 17 ~5×10 18 Between them, directly serve as the base region 101 of the bottom cell; use high-temperature diffusion of P or As to obtain the emitter region 102 of the bottom cell.

[0027] The nucleation layer 700 grows In directly on the patterned substrate y Ga 1-y P, doped with Si, the growth thickness is 0.4-0.6 μm, and the value of y is determined by calculation. The lattice constant of this layer is matched to the middle cell 200 and ...

Embodiment example 2

[0034] Can also use In x Ga 1-x As to grow 700 nucleation layer. The rest of the structure is the same.

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Abstract

The invention discloses a three-joint solar battery based on a graphical germanium substrate and a preparation method of the three-joint solar battery, and belongs to the technical field of semiconductor materials. Firstly, the graphical germanium (Ge) substrate is spread to form a Ge bottom battery. Secondly, a large mismatch InxGal-xAs middle battery directly grows on a graph of the substrate. Finally, a top battery InyGal-yP matched with a lattice of the middle battery grows. By adopting the solar battery of the structure, from the aspect of the solar spectrum and the band gap, the currents of the bottom battery, the middle battery and the top battery are similar, the light source utilization rate of the three-joint solar battery is much higher than that of an ordinary three-joint battery with the band gaps not matched, and the efficiency of the solar battery is obviously improved. Meanwhile, from the aspect of matching of lattice constants, the graphical substrate resolves the problem of material growth caused by mismatching of the lattices of materials with the matched band gaps.

Description

technical field [0001] The invention relates to the preparation technology of high-efficiency triple-junction solar cells, and belongs to the technical field of semiconductor materials. Background technique [0002] As a clean energy source, solar cells have great application prospects in national defense and civilian applications. With the development of the world's aerospace industry and terrestrial concentrating photovoltaics, high-efficiency compound semiconductor solar cells have been widely valued by academia and industry. [0003] At present, the main obstacle restricting the development of compound semiconductor solar cells is high cost, and the key to reducing the cost of solar cells is to further improve the photoelectric conversion efficiency of solar cells. The main factors affecting the efficiency of multi-junction compound solar cells include: lattice matching, current matching and bandgap distribution. Now, the triple-junction tandem solar cell GaInP / GaAs / Ge...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/0725H01L31/18
CPCY02E10/50Y02P70/50
Inventor 占荣
Owner YANGZHOU CHANGELIGHT