A triple-junction solar cell based on a patterned germanium substrate and its preparation method
A technology of solar cells and bottom cells, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of high epitaxial production cost, waste of substrates, and complicated processes
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Embodiment example 1
[0024] Such as figure 1 As shown, three solar cells based on patterned germanium substrate, including Ge bottom cell 100, In x Ga 1-x As medium battery 200, In y Ga 1-y P top cell 300, middle cell bottom cell tunnel junction 400 and middle cell top cell tunnel junction 500 connecting subcells together, and InGaP nucleation layer 700 and In x Ga 1-x As cap contact layer 600 .
[0025] The specific structure is as follows:
[0026] The growth substrate uses a patterned germanium substrate, p-type, with a doping concentration of 5×10 17 ~5×10 18 Between them, directly serve as the base region 101 of the bottom cell; use high-temperature diffusion of P or As to obtain the emitter region 102 of the bottom cell.
[0027] The nucleation layer 700 grows In directly on the patterned substrate y Ga 1-y P, doped with Si, the growth thickness is 0.4-0.6 μm, and the value of y is determined by calculation. The lattice constant of this layer is matched to the middle cell 200 and ...
Embodiment example 2
[0034] Can also use In x Ga 1-x As to grow 700 nucleation layer. The rest of the structure is the same.
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