Treatment method for impurities in silicon material
A treatment method and impurity technology, which is applied in chemical instruments and methods, self-melting liquid pulling method, crystal growth, etc., can solve the problems of affecting the crystallization rate of the ingot, breaking the edge of the ingot, and increasing the production cost of the single crystal furnace, etc. , to reduce costs and increase yield
Inactive Publication Date: 2013-08-28
YINGLI ENERGY CHINA
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Problems solved by technology
Once impurities enter the silicon liquid, the single crystal furnace will not be able to operate normally, and the ingots drawn by the single crystal furnace will have broken edges, which will affect the yield of the ingots
[0003] In the prior art, when the vacuum pump stops running, the current process can only continue to run. Due to the increase of impurities in the silicon liquid, the ingot will break at this time, and the single crystal furnace will no longer be able to pull the single crystal. Crystalline silicon rods can only be drawn into polycrystalline silicon rods, which affects the crystallization rate of crystal rods and increases the production cost of single crystal furnaces
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[0018] The embodiments of the present invention will be described in detail below with reference to the accompanying drawings, but the present invention can be implemented in many different ways defined and covered by the claims.
[0019] Explanation of terms:
[0020] Single crystal furnace: in an inert gas environment, a graphite resistance heater is used to melt the silicon material and grow a dislocation-free single crystal rod by the Czochralski method.
[0021] Heater: It is one of the important components of the thermal field of the single crystal furnace, and it is a heating component that provides heating for the single crystal furnace.
[0022] Graphite crucible: It is one of the important components of the thermal field of the single crystal furnace. It supports and protects the quartz crucible at high temperature.
[0023] By analyzing the impurity components in the silicon liquid, the inventor found that because the single crystal furnace operates in a high tempe...
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The invention provides a treatment method for impurities in a silicon material. The treatment method for impurities in the silicon material comprises an impurity separation step for separating the impurities from the silicon material in a gaseous state by enabling the temperature of a heater to be higher than the boiling points of the impurities and lower than the boiling point of the silicon material. According to the treatment method for the impurities in the silicon material, the impurities in the silicon material in a mono-crystal furnace can be removed; and when the mono-crystal furnace is used for drawing mono-crystal silicon rods, the yield of the mono-crystal silicon rods can be greatly increased, and the production cost of enterprises for the mono-crystal silicon rods can be reduced.
Description
technical field [0001] The invention relates to the field of impurity treatment, in particular to a method for treating impurities in silicon materials. Background technique [0002] The single crystal furnace needs to use a vacuum pump to exhaust when it is running. A flash of external power supply or a mechanical failure of the vacuum pump will cause the vacuum pump to stop running. If the vacuum pump stops due to the external network power supply flashing, you need to manually turn on the vacuum pump; if the vacuum pump has a mechanical failure, you need to replace the new vacuum pump and then turn on the vacuum pump to continue to run. After the vacuum pump stops running, the pump chamber will automatically backfill with air to become normal pressure, while the single crystal furnace is still in a low-pressure environment, and the internal and external pressure difference will make the impurities in the exhaust pipe sucked into the furnace chamber. At this time, some im...
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Inventor 白剑铭
Owner YINGLI ENERGY CHINA