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A micromechanical resonator and its manufacturing method

A micromechanical resonator and resonator technology, applied in electrical components, impedance networks, etc., can solve the problems of complex process, high cost, high packaging cost, etc., to simplify the manufacturing process, reduce the manufacturing cost, and reduce the feedback The effect of the pass effect

Active Publication Date: 2016-04-20
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually, the electrical lead-out of hermetic packaging adopts the method of metal filling through the cover sheet (TSV), but the process is complex and expensive, resulting in high packaging costs

Method used

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  • A micromechanical resonator and its manufacturing method
  • A micromechanical resonator and its manufacturing method
  • A micromechanical resonator and its manufacturing method

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Experimental program
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Embodiment Construction

[0083] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0084] The present invention provides a micromechanical resonator and a manufacturing method thereof. The micromechanical resonator is a bulk resonant micromechanical resonator with a nanocapacitance gap, such as figure 1 As shown, the micromechanical resonator shown includes a bonded and sealed resonator die and a package lid, where the resonator die is as figure 2 As shown, it includes the resonant unit 1, the support center column 2 below the resonator unit, the input electrode 3 and the output electrode 4 on both sides of the resonator unit, the bias electrode 5 connected to the resonator center column, the electrode pressure pad 6 and the input or A tiny gap 16 between the output electrode and the resonant unit. Th...

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Abstract

The invention discloses a micromechanical resonator and a manufacturing method thereof. The micromechanical resonator is formed by a resonator crystal plate and a packing cover piece through bonding and sealing. The resonator crystal plate comprises an input electrode, an output electrode, a bias electrode, a resonance unit and a supporting structure. Larger-area grounding holes around the resonator structure reduce feed-through signals, and micro heaters around the resonator achieve high-precision temperature compensation. The outermost peripheral structure of the resonator crystal plate is a bonding packing ring, and the packing cover piece comprises a packing cavity, the bonding packing ring and an electrical leading-out structure. According to the micromechanical resonator and the manufacturing method thereof, high-precision and large-scale manufacturing of the high-performance resonator is achieved, wafer-level air impermeability bonding packing is achieved, and the manufacturing method can be applied to low-cost large-scale production of high-performance MEMS resonators.

Description

technical field [0001] The invention relates to the field of micro-electromechanical (MEMS) technology, in particular to a micro-mechanical resonator and a manufacturing method thereof. Background technique [0002] At present, the radio frequency circuit system represented by the wireless communication system is developing towards higher frequency, integration, miniaturization and low power consumption, and there is an urgent need for high-performance integrable resonant devices, such as high-Q resonators, filter etc. Traditional radio frequency resonant devices, such as quartz crystal oscillators, are not compatible with silicon-based micromachining processes due to their own material limitations, and it is difficult to achieve miniaturization and integration, which has become a technical bottleneck for the miniaturization of radio frequency systems. [0003] Micromechanical (MEMS) resonators based on micromachining technology have the characteristics of high frequency, h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/24
Inventor 杨晋玲赵晖骆伟袁泉杨富华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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