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Structure for reducing contact resistance of graphene material and metal

A metal contact and graphene technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., to achieve the effect of reducing contact resistance, high mobility, and good feasibility

Inactive Publication Date: 2013-09-11
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the mobility of carriers in multilayer graphene is much smaller than that in single layer graphene.

Method used

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  • Structure for reducing contact resistance of graphene material and metal
  • Structure for reducing contact resistance of graphene material and metal
  • Structure for reducing contact resistance of graphene material and metal

Examples

Experimental program
Comparison scheme
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Embodiment

[0024] In this embodiment, the insulating layer 11 is arranged on the semiconductor substrate 10, the graphene material 12 in the channel region is arranged on the insulating layer 11, the graphene materials 13 and 14 in the contact region are arranged on the insulating layer 11, and the graphite in the contact region Graphene materials 13 and 14 are respectively arranged on the two ends of the graphene material 12 in the conductive region; photoresist 17 is arranged on the graphene material 12 in the channel region, and on the multilayer graphene material 13 and 14 in the contact region; metal electrodes 15 and 16 are arranged On the multilayer graphene material 13 and 14 in the contact area.

[0025] In this embodiment, silicon is used as the semiconductor substrate, silicon dioxide is used as the insulating layer, single-layer graphene is used as the graphene in the conductive region, three-layer graphene is used as the multilayer graphene material in the contact region, and...

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Abstract

The invention discloses a structure for reducing contact resistance of a graphene material and metal. The structure is that multiple layers of graphene are used in a contact region of the graphene material and the metal, and a single layer of graphene is used in a channel region. By utilizing the structure for reducing the contact resistance of the graphene material and the metal, the contact resistance of the graphene material and the metal is reduced, accordingly ON state current of a graphene field effect transistor (FET) device is effectively increased, the transconductance and the cut-off frequency of the device are improved, and the asymmetry of the graphene FET device is improved.

Description

technical field [0001] The invention relates to the technical field of contact between graphene materials and metals, in particular to a structure for reducing the contact resistance between graphene materials and metals. Background technique [0002] Nanoelectronics based on carbon materials, especially graphene (Graphene) materials, due to their high carrier mobility and saturation velocity, and their two-dimensional planar structure can be integrated with traditional Si processes, are considered to have It has great application prospects and great potential to replace silicon-based materials. Since graphene was successfully developed in 2004, research on graphene devices has made great progress. Graphene-based nanoelectronic devices have the characteristics of small size, high speed, low power consumption, and simple process, and have attracted more and more attention. [0003] In the development of graphene FET devices, the gate dielectric and the contact between graph...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/10H01L29/08H01L29/16
Inventor 金智陈娇麻芃王显泰彭松昂
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI