Ge channel metal-oxide-semiconductor field-effect transistor with InAlP cover layer

A technology of oxide semiconductors and field effect transistors, applied in the field of Ge channels, can solve the problems of small band steps, high effective electron mobility, and impossibility

Inactive Publication Date: 2013-09-18
CHONGQING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for n-type Ge channel MOSFET devices, the method invented by the predecessors cannot achieve high effective electron mobility.
Regardless of the GeO2, Si passivation layer or GeON layer, the interface with the Ge channel has too small a band step on the conduction band to...

Method used

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  • Ge channel metal-oxide-semiconductor field-effect transistor with InAlP cover layer
  • Ge channel metal-oxide-semiconductor field-effect transistor with InAlP cover layer
  • Ge channel metal-oxide-semiconductor field-effect transistor with InAlP cover layer

Examples

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no. 1 example

[0026] The first example shows the fabrication of an n-type Ge channel MOSFET 10 with an InAlP capping layer.

[0027] figure 1 It is the interface mode diagram of MOSFET (10). figure 2 is a top view model diagram of MOSFET (10). figure 2 The cross-sectional view of the I-I line in the middle, and figure 1 corresponding to the sectional view. Its structure is as follows:

[0028] A substrate 108 with a Ge channel 101 thereon; an InAlP capping layer 102 positioned on the Ge channel 101; an insulating dielectric film 103 positioned on the InAlP capping layer 102; 106 a gate electrode, Located on the insulating dielectric film 103; a source 104 and a drain 105 are respectively located on both sides of the gate electrode 106; a first insulating spacer 107 is located between the gate and the source, The gate and the source are separated; the second insulating spacer 107, located between the gate and the drain, separates the gate and the drain.

[0029] Manufacturing process...

no. 2 example

[0037] The second example shows the fabrication of a p-type Ge channel MOSFET 20 with an InAlP capping layer.

[0038] Figure 9 It is the interface mode diagram of MOSFET20. Figure 10 is a top view model diagram of MOSFET (20). Figure 10 The cross-sectional view of the I'-I' line in the middle, and Figure 9 corresponding to the sectional view. Its structure is as follows:

[0039] a substrate 208 with a layer of relaxed Si 1-x Ge x (01-x Ge x(0

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Abstract

The invention provides a Ge channel metal-oxide-semiconductor field-effect transistor (MOSFET) with an InAlP cover layer. The MOSFET (10) is characterized in that a Ge channel (101) is positioned on a substrate (108), the InAlP cover layer (102) is arranged above the Ge channel, an insulating dielectric film (103) is positioned between the InAlP cover layer and a gate (106), an insulating gap wall (107) separates the gate and a source/drain area (104 and 105), and an insulating gap wall separates the InAlP cover layer and the source/drain area. InAlP has a larger forbidden bandwidth than Ge, and effective band offset is formed at the positions of a conduction band and an interface valence band of Ge and InAlP so as to limit a conducting charge carrier in a Ge channel layer.

Description

technical field [0001] The invention relates to a Ge channel MOSFET (Metal-oxide-semiconductor Field-effect Transistor: metal-oxide-semiconductor field-effect transistor) with an InAlP capping layer. Background technique [0002] With the in-depth development of integrated circuit technology, in order to improve chip performance and integration, the channel length of Metal-oxide-semiconductor Field-effect Transistor (MOSFET) is continuously shortened, and the device performance is also continuously improved. According to the forecast of the International Technology Roadmap for Semiconductors (ITRS), when the integrated circuit technology node reaches below 10 nanometers, the strained Si material can no longer meet the needs, and the high carrier mobility material MOSFET must be introduced to improve the chip. performance. Single crystal Ge materials have high electron and hole mobility (electron: 3900cm 2 / V·s; Hole: 1900cm 2 / V s), is a popular material for realizing hig...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/10H01L21/336
Inventor 韩根全刘艳
Owner CHONGQING UNIV
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