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Method for preparing high-silicon silicon steel ribbon by hot dipping silicon method and continuous preparation device of silicon steel ribbon

A technology of hot-dip plating and thin strip, which is applied in hot-dip plating process, metal material coating process, coating, etc., can solve the problem of lack of low-cost preparation of high-silicon steel sheet, affecting the surface quality of strip steel, and friction and scratches on the surface of steel and other problems to achieve the effect of avoiding processing difficulties, uniform thickness and saving energy

Active Publication Date: 2013-09-25
SHANGHAI UNIV
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AI Technical Summary

Problems solved by technology

In the process of hot-dip galvanizing, a sinking roll needs to be placed in the zinc bath as a non-drive turning roll. The temperature of hot-dip galvanizing is generally 440-460°C, and the requirements for the material of the sinking roll are not very strict. However, in more It is very difficult to hot-dip high-melting-point substances at high temperatures to obtain the required materials, especially for functional materials that have very strict requirements on material purity. At the same time, the relative sliding between the sinking roll and the strip will cause friction and scratches on the surface of the steel. It will also seriously affect the surface quality of the strip
It can be seen that there are still many technical problems to be solved in the process and equipment for continuous preparation and large-scale production of high-quality high-silicon steel sheets, and there is still a lack of effective means for low-cost preparation of high-silicon steel sheets

Method used

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  • Method for preparing high-silicon silicon steel ribbon by hot dipping silicon method and continuous preparation device of silicon steel ribbon

Examples

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Embodiment 1

[0030] In this example, see figure 1 , a continuous preparation device for silicon steel strips, mainly comprising an unwinding guide device, a preheating furnace 6, a continuous supply device for plating solution, a hot-dip plating device, a diffusion heat treatment device and a winding device arranged according to the sequence of processes, specifically:

[0031] Prepare the spare basic strip 4 of the high silicon silicon steel strip by using the low silicon steel strip or the pure iron strip as the hot-dip silicon plating method, and roll the continuous spare basic strip 4 on the reel to form the spare basic strip roll 1 , the unwinding guiding device includes the unwinding conveying roller 2 of the spare base thin strip roll 1, the pretreatment guide pulley 3 and the pretreatment conveying roller 5, after the spare base thin strip 4 is uncoiled and drawn out by the unwinding conveying roller 2, it bypasses the pretreatment The guide pulley 3 continues to transport the spar...

Embodiment 2

[0038] This embodiment is basically the same as Embodiment 1, especially in that:

[0039] In this embodiment, the preheating furnace 6, the reserve molten pool device and the hot-dip coating device are placed in an insulated airtight room, and the waste heat recovery device will collect The thermal energy is transmitted to the diffusion heat treatment device as an auxiliary heat source for the uniform temperature field in the furnace chamber of the heat treatment furnace 20 . In this embodiment, the waste heat of the hot-dip coating process is used as an auxiliary heat source for the heat treatment of the high-silicon composite coated steel strip blank, so as to realize the recovery and utilization of waste heat and save energy.

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Abstract

The invention discloses a method for preparing a high-silicon silicon steel ribbon by a hot dipping silicon method. A standby basis ribbon is transmitted and enabled to pass through hot dipping solution in a hot dipping tank, so that a hot dipping high-silicon plating layer is covered on the surface of the standby basis ribbon, the thickness and surface evenness of the hot dipping high-silicon plating layer are modified and controlled to obtain a high-silicon composite plate steel strip blank, and then uniform radiating treatment is carried out to continuously prepare a high-silicon steel ribbon with uniformly distributed silicon elements. The invention also discloses a continuous preparation device of silicon steel ribbon, which comprises an unreeling guide device, a preheating furnace, a plating solution continuous supply device, a hot dipping device, a radiating heat treatment device and a wrapping device which are arranged according to the precedence order of the processes. According to the method, the low-silicon steel ribbon rapidly passes through the high-silicon solution to plate a high-silicon plating layer, and the high-silicon silicon steel ribbon with excellent magnetic property is obtained through heat treatment. The method is simple to operate, and has the characteristics of high efficiency and capability of preparing continuously, and the preparation cost can be greatly reduced.

Description

technical field [0001] The invention relates to a metal material preparation process and equipment, in particular to a silicon steel strip preparation process and device, which are applied in the technical field of continuous silicon steel strip manufacturing. Background technique [0002] Silicon steel, also known as electrical steel, is an important magnetic material used in the electric power and telecommunications industry to manufacture generators, motors, transformers, transformers, relays and other electrical instruments. As we all know, the silicon content in silicon steel sheets has a great influence on the characteristics of its products, such as the obvious influence on the magnetic induction intensity and iron loss. Studies have shown that: with the increase of silicon content, the resistivity of silicon steel sheet increases, and the eddy current loss decreases, thus showing excellent magnetism at higher frequencies. When the silicon content in silicon steel she...

Claims

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Application Information

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IPC IPC(8): C23C2/40C23C2/04C23C2/28
Inventor 钟云波龙琼董立城李甫李明杰周俊峰任维丽雷作胜
Owner SHANGHAI UNIV
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