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Novel photoresist stripper and application technology thereof

A photoresist and stripping solution technology, applied in a new type of photoresist stripping solution and its application technology field, can solve problems such as substrate defects and increase in degumming time, and achieve the advantages of preventing corrosion, saving process time and simple process. Effect

Active Publication Date: 2013-10-02
KEMPUR MICROELECTRONICS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This step will increase the stripping time and may cause defects in the substrate

Method used

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  • Novel photoresist stripper and application technology thereof
  • Novel photoresist stripper and application technology thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 4

[0046] Take 70g of dimethyl sulfoxide, add 24g of N-methylacetamide, add 5g of oxalic acid and 1g of ethylenediaminetetraacetic acid (EDTA), mix well, and filter under pressure with a 0.1um filter element or filter membrane to obtain the required photolithography Adhesive stripper.

[0047] In the above-mentioned 2-4 embodiment, the fully mixed sample is placed in the glue tank, and then according to the attached figure 1 Indicated process flow for removing photoresist stripper. Preferably, heat to 50°C, put the substrate (aluminum) to be treated into the stripping solution of the degumming tank, keep the temperature for 30 minutes, take out the substrate, and then immerse it in isopropanol for 5 minutes, and use a large amount of deionized Rinse the substrate with water, and finally use a microscope to observe whether there is photoresist residue.

[0048] For Examples 1-4, samples of the stripping solution before and after processing the substrate were taken to test the me...

Embodiment 5

[0052] Take 68g of dimethyl sulfoxide, add 27g of N-methylacetamide, add 4g of oxalic acid and 1g of ethylenediaminetetraacetic acid (EDTA), mix well, and filter under pressure with a 0.1um filter element or filter membrane to obtain the required photolithography Adhesive stripper.

[0053] In this embodiment, the fully mixed sample is placed in the degumming tank, and then preferably, heated to 70°C, the substrate to be treated is put into the stripping solution of the degumming tank, and the temperature is maintained for 20 minutes, and the substrate is taken out. Then immerse in isopropanol for 5 minutes, rinse the substrate with a large amount of deionized water after taking it out, and finally use a microscope to observe whether there is photoresist residue.

Embodiment 6

[0055] Take 74g of dimethyl sulfoxide, add 20g of N-methylacetamide, add 4g of oxalic acid and 1g of ethylenediaminetetraacetic acid (EDTA), mix well, and filter under pressure with a 0.1um filter element or filter membrane to obtain the required photolithography Adhesive stripper.

[0056] In this embodiment, the fully mixed sample is placed in the degumming tank, and then preferably heated to 70°C, the substrate to be treated is put into the stripping liquid of the degumming tank, and the temperature is maintained for 15 minutes, and the substrate is taken out. Then immerse in isopropanol for 5 minutes, rinse the substrate with a large amount of deionized water after taking it out, and finally use a microscope to observe whether there is photoresist residue.

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Abstract

The invention relates to a novel photoresist stripper used for removing superfluous photoresist on a substrate. The stripper comprises an organic solvent used for dissolving, a crosslinking catalyst for accelerating glue removal rate and an anticorrosion protective agent for avoiding substrate corrosion. The photoresist stripper can shorten common glue removal period, has no toxicity to human body and the environment, and can thoroughly remove crosslinked photoresist after exposure especially negative photoresist, in order to prevent influence on subsequent usage performance. In addition, the invention also provides a technology process for utilization of the photoresist stripper. The process does not comprise heating or oscillation, thereby increasing glue removal speed and avoiding possible damage on the substrate caused by auxiliary measures.

Description

technical field [0001] The invention relates to a stripping solution for removing photoresist and related application technology, especially for removing photoresist in the stripping process. Background technique [0002] Photoresist is a photosensitive material, which is a mixed liquid composed of photosensitive resin, photosensitive agent and solvent. After the photosensitive resin is exposed to light, the photocuring reaction can quickly occur in the exposed area, so that the physical properties of the material, especially the solubility and affinity, will change significantly. After appropriate solvent treatment, the soluble part is dissolved, and the photoresist can form the desired image, which is mainly used in the field of microelectronics manufacturing. For example, in semiconductor devices, liquid crystal devices and integrated circuits, it is necessary to use a series of steps such as coating and exposure of photoresist on the substrate to complete the etching te...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
CPCG03F7/425G03F7/426G03F7/162G03F7/168G03F7/20G03F7/32G03F7/38
Inventor 李冰陈昕罗杰·森特李海波于晓伟
Owner KEMPUR MICROELECTRONICS