A semiconductor ultraviolet light source device

An ultraviolet light source and semiconductor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of high working voltage and low luminous efficiency of ultraviolet LEDs, and achieve the effect of reducing forward working voltage and improving luminous efficiency.

Active Publication Date: 2016-07-06
MAANSHAN JASON SEMICON CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0005] Aiming at the problems of low luminous efficiency and high working voltage of the existing ultraviolet LED, the present invention proposes a semiconductor ultraviolet light source device, which is realized by the following technical scheme:

Method used

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  • A semiconductor ultraviolet light source device
  • A semiconductor ultraviolet light source device
  • A semiconductor ultraviolet light source device

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Embodiment Construction

[0027] The realization idea of ​​the present invention is as follows: the AlInGaN ultraviolet LED contains many heterogeneous interfaces, and at the heterogeneous interfaces, the composition of group III elements undergoes a sudden change, resulting in sudden changes in many materials and physical parameters such as lattice constants, piezoelectric constants, and polarization constants. . Reasonable treatment of the heterointerface is the key to obtaining high-efficiency UV LEDs. First, defects, such as dislocations, should be avoided at the heterointerface. Second, it is necessary to fully consider the polarization phenomenon of the material and configure a reasonable interface polarization charge density. The best way to eliminate or reduce the polarization charge on the heterointerface is to form a heterointerface with a nonpolar or semipolar surface. The present invention finds that in the M-surface Semipolar facets formed on sapphire GaN, AlN, AlGaN and other III-ni...

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Abstract

The invention discloses a semiconductive solid ultraviolet light source device, of which an extending structure comprises an N-type AlGaN layer, a P-type AlGaN layer and a AlGaN / AlGaN multiple quantum well lighting area wrapped between the N-type AlGaN layer and the P-type AlGaN layer, the extending developing surface of the extending structure is a plane formed on a lining, wherein the lining is an m-sapphire lining of which the surface is provided with sapphire bosses in a size of micron and submicron. According to the invention, by regulating the direction of the extending developing of AlInGaN material, a polarization-induced electric field is in a lighting area multiple quantum well is lowered, energy band sides of a quantum barrier and a quantum well are lowered, positive working voltage of an ultraviolet LED is lowered, and the lighting efficiency of the quantum well is improved.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to an epitaxial structure of a semiconductor solid-state ultraviolet light source device. Background technique [0002] The energy band width of group III nitride AlInGaN material is continuously adjustable from 0.7eV to 6.2eV, and it is the main material system for making semiconductor solid-state ultraviolet light-emitting diodes (LEDs). Compared with traditional ultraviolet light sources, AlInGaN semiconductor ultraviolet LED has many advantages such as pollution-free, small size, long life, high efficiency, fast response, adjustable wavelength, high optical power density, and flexible application product design, so it is gradually used in various applications. important role. High power 365nm LED is expected to replace high pressure mercury lamp (I 2 line, 365nm) will become the next generation of high-efficiency UV curing light source; high-power deep UV LED (wavelength &...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/16H01L33/06H01L33/20
Inventor 张剑平岳金顺张国华
Owner MAANSHAN JASON SEMICON CO LTD
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