GaN-based LED epitaxial structure of inverted triangular barrier, and growth method thereof

An epitaxial structure, inverted triangle technology, applied in electrical components, nanotechnology, circuits, etc., can solve the problem of reducing photoelectric performance, can not improve the ability of hole injection and light-emitting layer limitation, can not better improve GaN-based blue LEDs Photoelectric performance and other issues, to achieve the effect of improving luminous efficiency and suppressing the quantum Stark effect
CN112436079AInactive Publication Date: 2021-03-02YANGZHOU UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
YANGZHOU UNIV
Publication Date
2021-03-02
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a GaN-based LED epitaxial structure of an inverted triangular barrier, and a growth method thereof. A light-emitting layer is formed by barrier layers and quantum well layers alternately, wherein each barrier layer is a GaN-InxGa1-xN-GaN barrier layer, called a GIG barrier layer for short, and is sequentially formed by one GaN barrier, an InxGa1-xN barrier and one GaN barrier according to the growth sequence, and x in the AlxGa1-xN barrier gradually grows from 0 to 0.15 and then to 0 along the growth direction. The GaN barrier structure of a traditional LED is replacedwith a GIG inverted-triangle-shaped barrier structure, a polarization electric field of a barrier and a quantum well can be effectively reduced through application of an InGaN material in the barrierlayer, the quantum stark effect is effectively inhibited, meanwhile, the effective height of the barrier is not reduced through the special barrier shape provided by the invention, and the inverted triangular potential barrier can still effectively limit current carriers.
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Description

technical field

[0001] The invention relates to the field of LED design and application, in particular to an LED epitaxy structure with improved hole injection layer and light emitting layer structure and a growth method thereof. Background technique

[0002] GaN-based blue LEDs, as a new generation of lighting sources, are widely used in background lighting, medical lighting, etc., and are one of the important light sources for white light. However, with the needs of industrial production, GaN-based blue LEDs are increasingly required Then, the GaN-based blue LED has a large efficiency attenuation phenomenon, which seriously reduces its photoelectric performance. In the current research, the large electron leakage and poor hole injection It is an important reason for the efficiency attenuation.

[0003] At present, the main method to improve the transport of carriers and improve its photoelectric efficiency is to grow an AlGaN electron blocking layer between the light-emit...

Claims

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