GaN-based LED epitaxial structure of inverted triangular barrier, and growth method thereof

Abstract

The invention discloses a GaN-based LED epitaxial structure of an inverted triangular barrier, and a growth method thereof. A light-emitting layer is formed by barrier layers and quantum well layers alternately, wherein each barrier layer is a GaN-InxGa1-xN-GaN barrier layer, called a GIG barrier layer for short, and is sequentially formed by one GaN barrier, an InxGa1-xN barrier and one GaN barrier according to the growth sequence, and x in the AlxGa1-xN barrier gradually grows from 0 to 0.15 and then to 0 along the growth direction. The GaN barrier structure of a traditional LED is replacedwith a GIG inverted-triangle-shaped barrier structure, a polarization electric field of a barrier and a quantum well can be effectively reduced through application of an InGaN material in the barrierlayer, the quantum stark effect is effectively inhibited, meanwhile, the effective height of the barrier is not reduced through the special barrier shape provided by the invention, and the inverted triangular potential barrier can still effectively limit current carriers.

Description

technical field [0001] The invention relates to the field of LED design and application, in particular to an LED epitaxy structure with improved hole injection layer and light emitting layer structure and a growth method thereof. Background technique [0002] GaN-based blue LEDs, as a new generation of lighting sources, are widely used in background lighting, medical lighting, etc., and are one of the important light sources for white light. However, with the needs of industrial production, GaN-based blue LEDs are increasingly required Then, the GaN-based blue LED has a large efficiency attenuation phenomenon, which seriously reduces its photoelectric performance. In the current research, the large electron leakage and poor hole injection It is an important reason for the efficiency attenuation. [0003] At present, the main method to improve the transport of carriers and improve its photoelectric efficiency is to grow an AlGaN electron blocking layer between the light-emit...

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Problems solved by technology

[0002] GaN-based blue LEDs, as a new generation of lighting sources, are widely used in background lighting, medical lighting, etc., and are one of the important light sources for white light. However, with the needs of industrial production, GaN-based blue LEDs are increasingly required Then, the GaN-based blue LED has a large efficiency attenuation phenomenon, which seriously reduces its photoelectric performance. In the current research, the large electron leakage and poor hole injection is an important reason for the efficiency attenuation

[0003] At present, the main method to improve the transport of carriers and improve its photoelectric efficiency is to grow an AlGaN electron blocking layer between the light-emitting layer and the p-type GaN layer. However, although growing an AlGaN electron blocking layer can effectively improve the electron barrier, Suppressing electron leakage, but it will also increase the hole barrier, resulting in worse hole injection, and cannot better improve the photoelectric performance of GaN-based blue LEDs. On the other hand, because the growth of the AlGaN layer requires high temperature and high Doping conditions, which will further damage the LED chip, bringing lattice defects and greater stress

[0004] In addition to growing the AlGaN electron blocking layer, the industry has also proposed to grow light-emitting layer structures with different structures through energy band engineering to improve the transport and distribution of carriers in the light-emitting layer, for example, to grow the barrier of GaN / InGaN composite structure layer, which can reduce the polarization effect to a certain extent and improve the confinement effect of the quantum well on electrons, but it cannot improve the hole injection and the ability of the light-emitting layer to confine it, and can only slightly improve the GaN-based blue LED. Photoelectric performance, making it meet the needs of industrial production

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