Semiconductor device and method of forming the same

Abstract

A semiconductor device and its forming method, the semiconductor device includes: a semiconductor substrate, the semiconductor substrate includes a high-frequency block group and a low-power block group; a high-frequency type logic standard unit located on the high-frequency block group, a high-frequency type logic Standard cells have high-frequency type cell height, high-frequency type operating frequency, and high-frequency type power; low-power type logic standard cells located on low-power block groups, low-power type logic standard cells have low-power type cell heights , Low power consumption type operating frequency and low power consumption type power, high frequency type unit height is greater than low power consumption type unit height, high frequency type operating frequency is greater than low power consumption type operating frequency, high frequency type power is greater than low power consumption type power The high-frequency type logic standard cell includes a high-frequency type fin, the low-power type logic standard cell includes a low-power type fin, and the effective height of the high-frequency type fin is greater than that of the low-power type fin. The performance of the semiconductor device is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] MOS (Metal-Oxide-Semiconductor) transistors are one of the most important components in modern integrated circuits. The basic structure of the MOS transistor includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate, and the gate structure includes: a gate dielectric layer located on the surface of the semiconductor substrate and a gate electrode layer located on the surface of the gate dielectric layer; The source and drain doped regions in the semiconductor substrate on both sides of the pole structure. [0003] With the development of semiconductor technology, the ability of the traditional planar MOS transistor to control the channel current becomes weaker, resulting in serious leakage current. Fin Field Effect Transistor (Fin FET) i...

AI Technical Summary

Problems solved by technology

[0004] However, the performance of semiconductor devices composed of fin field effect transistors in the prior art still needs to be improved

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