Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Flexible copper indium gallium selenium thin film solar cell module and preparation method thereof

A thin-film solar cell, copper indium gallium selenide technology, which is applied in the field of solar cells, can solve the problems of mechanical cutter head falling into the interior of flexible substrate, difficult for laser to pass through, and short circuit of battery, so as to achieve uniform groove width, reduce damage, and improve The effect of production efficiency

Inactive Publication Date: 2013-10-09
NANKAI UNIV
View PDF5 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Glass substrate CIGS thin-film battery components use laser scribing to cut the back electrode from the back to form the basis of thin-film battery components, but polyimide or flexible metal materials are opaque, and it is difficult for the laser to pass through the flexible substrate, so the back electrode cannot be used to cut the back electrode However, the method of scribing the back electrode by mechanical scribing on the front side will cause the mechanical knife head to sink into the flexible substrate, and at the same time, a large number of debris will remain in the groove, resulting in a short circuit of the sub-battery of the component.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flexible copper indium gallium selenium thin film solar cell module and preparation method thereof
  • Flexible copper indium gallium selenium thin film solar cell module and preparation method thereof
  • Flexible copper indium gallium selenium thin film solar cell module and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] A flexible copper indium gallium selenide thin film solar cell module, such as figure 1 As shown, it consists of polyimide flexible substrate 1, double-layer Mo metal back electrode 2, copper indium gallium selenide thin film absorber layer 3, CdS buffer layer 4, intrinsic ZnO thin film barrier layer 5 and transparent conductive aluminum-doped ZnO thin film window layer 6 components and sequentially form a laminated structure, the thickness of each layer is: polyimide flexible substrate is 25 μm, the thickness of the first layer of Mo film in the double-layer Mo metal back electrode is 300nm, the thickness of the second layer of Mo film is 600nm, copper Indium gallium selenium thin film absorption layer 2μm, CdS buffer layer 60nm, intrinsic ZnO thin film barrier layer 80nm, transparent conductive aluminum-doped ZnO thin film window layer 500nm.

[0026] The preparation method of the flexible copper indium gallium selenide thin film solar cell module, the steps are as fo...

Embodiment 2

[0034] A flexible copper indium gallium selenide thin film solar cell module, such as figure 1 As shown, it is composed of stainless steel foil flexible substrate 1, double-layer Mo metal back electrode 2, copper indium gallium selenide thin film absorber layer 3, CdS buffer layer 4, intrinsic ZnO thin film barrier layer 5 and transparent conductive aluminum-doped ZnO thin film window layer 6 And sequentially form a laminated structure, the thickness of each layer is: the thickness of the stainless steel foil flexible substrate is 100 μm, the thickness of the first Mo film in the double-layer Mo metal back electrode is 100 nm, the thickness of the second Mo film is 900 nm, copper indium gallium selenide Thin-film absorption layer 1.5 μm, CdS buffer layer 80nm, intrinsic ZnO thin-film barrier layer 60nm, transparent conductive aluminum-doped ZnO thin-film window layer 350nm.

[0035] The preparation method of the flexible copper indium gallium selenide thin film solar cell modu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Widthaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a flexible copper indium gallium selenium thin film solar cell module which is composed of a flexible substrate, a double-layer Mo metal back electrode, a copper indium gallium selenium thin film absorbing layer, a CdS buffering layer, an intrinsic ZnO thin film barrier layer and a transparent conductive aluminum-doped ZnO thin film window layer, wherein the flexible substrate, the double-layer Mo metal back electrode, the copper indium gallium selenium thin film absorbing layer, the CdS buffering layer, the intrinsic ZnO thin film barrier layer and the transparent conductive aluminum-doped ZnO thin film window layer sequentially form a laminated structure. In the preparation process of the solar cell module, three carving grooves are respectively formed in the different layer faces in a marking mode. The flexible copper indium gallium selenium thin film solar cell module has the advantages of being suitable for the reel-to-reel process to prepare the flexible copper indium gallium selenium thin film solar cell module of a large area in a large-scale mode, meeting the requirements for voltage and currents of a photovoltaic module in the practical application, and achieving internal series connection of a flexible copper indium gallium selenium thin film solar cell. Moreover, the module is free from the short circuit and large in effective area, improves production efficiency and lowers production cost.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a flexible copper indium gallium selenium thin film solar cell component and a preparation method thereof. Background technique [0002] Copper indium gallium selenide thin-film solar cells have the advantages of high conversion efficiency, strong radiation resistance, and no attenuation. They are research and investment hotspots in the international photovoltaic industry and are one of the most promising thin-film solar cells. CIGS thin-film solar cells belong to the second generation of photovoltaic cells. Polycrystalline CIGS materials are used as the absorbing layer of the cells. Since the 1970s, rapid development has been achieved. At present, the highest laboratory efficiency of CIGS thin-film solar cells has reached 20.4%, which is comparable to that of polycrystalline silicon. The conversion efficiency of the battery is close to that of all thin film batteries. Flexi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/0224H01L31/18
CPCY02P70/50
Inventor 刘玮李志国孙云周志强张毅
Owner NANKAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products