Semiconductor structure and manufacturing method thereof

Abstract

The invention discloses a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate of a first conductivity type; a deep well of a second conductivity type, which is formed in the substrate and extends downward from the surface of the substrate; and a deep well of the first conductivity type. A first well extends downward from the surface of the substrate and is formed in the deep well; a second well of the second conductivity type extends downward from the surface of the substrate in the deep well and is separated from the first well by a distance; a gate, formed on the substrate and between the first well and the second well; an insulator extending downward from the substrate surface and formed between the gate and the second well; a conductive plug including an electrically connected The first part and the second part, the first part is electrically connected to the gate, and the second part extends into the insulator.

Description

technical field [0001] The invention relates to a semiconductor structure and its manufacturing method, and in particular to a semiconductor structure with a conductive plug and its manufacturing method, which can reduce the on-resistance and increase the breakdown voltage of the semiconductor structure at the same time. Background technique [0002] Continuing to shrink the size of semiconductor structures while simultaneously improving speed, performance, density, and reducing cost has been an important goal for the semiconductor industry. With the development of the semiconductor industry, high-power components are often used in many electronic components. In high-voltage operation or high-power power management integrated circuit (Power Management Integrated Circuit, PMIC) products, laterally diffused metal oxide semiconductor (Laterally Diffused Metal Oxide Semiconductor, LDMOS) or extended drain metal oxide semiconductor (Extended DrainMetal Oxide Semiconductor, EDMOS...

AI Technical Summary

Problems solved by technology

At present, there have been many structural improvements to improve the characteristics of LDMOS or EDMOS components (such as changing the shape or size of STI), but the improvement is still very limited. In terms of the ratio of on-resistance to breakdown voltage (Ron / BVD), Only about 5% improvement at most

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