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Preparation method of light self-trapping AZO (aluminium-doped zinc oxide) film glass

A thin film and glass technology, applied in the field of photovoltaic battery glass, can solve the problems of increased production costs, unreasonable consumption of AZO thin films, and increased process complexity, etc., to enhance mechanical strength, avoid unreasonable consumption, reduce costs and process stability Effect

Active Publication Date: 2013-11-20
(CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these etchings will lead to unnecessary consumption of the AZO film, and the resulting waste will increase the production cost and increase the process complexity accordingly.

Method used

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  • Preparation method of light self-trapping AZO (aluminium-doped zinc oxide) film glass
  • Preparation method of light self-trapping AZO (aluminium-doped zinc oxide) film glass
  • Preparation method of light self-trapping AZO (aluminium-doped zinc oxide) film glass

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Experimental program
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Effect test

Embodiment 1

[0021] 1. With the glass substrate as the substrate, the preparation temperature is maintained at 60°C, and a mixed gas of Ar and oxygen is introduced, wherein the oxygen partial pressure is 6′10 -3 Pa, Ar partial pressure is 2.1Pa, power density is 1.5W / cm 2 , using radio frequency magnetron sputtering process, using AZO ceramic target material for thin film sputtering growth, the time is 30 seconds, thus obtaining the first layer of AZO thin film;

[0022] 2. Introduce a separate Ar process gas, the pressure is 0.5Pa, and the power density is 8W / cm 2 , using radio frequency magnetron sputtering process, using AZO ceramic target material for thin film sputtering growth, the time is 600 seconds, thus obtaining the second layer of AZO thin film;

[0023] 3. The AZO film obtained above is subjected to SEM testing, such as figure 1 As shown, it can be seen from the figure that the film has a pit-like suede surface morphology, and the characteristic size of the suede is: the len...

Embodiment 2

[0026] 1. With the glass substrate as the substrate, the preparation temperature is kept at 60°C, and the mixed gas of Ar and water vapor is introduced, and the partial pressure of water vapor is 8′10 -3 Pa, Ar partial pressure is 2.4Pa, power density is 1.8W / cm 2 , using radio frequency magnetron sputtering process, using AZO ceramic target material for thin film sputtering growth, the time is 30 seconds, thus obtaining the first layer of AZO thin film;

[0027] 2. Introduce a single process gas of Ar, the pressure is 0.4Pa, and the power density is 9W / cm 2 , using radio frequency magnetron sputtering process, using AZO ceramic target material for thin film sputtering growth, the time is 600 seconds, thus obtaining the second layer of AZO thin film;

[0028] 3. The AZO film obtained above was subjected to SEM testing. The film also had pit-like suede surface morphology, and the characteristic dimensions of the suede were: about 500 nm in length and about 250 nm in depth.

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Abstract

The invention discloses a preparation method of light self-trapping AZO (aluminium-doped zinc oxide) film glass. The preparation method comprises the following steps of growing a layer of AZO film with a thickness of 50-100 nm at a high speed by virtue of the mixed plasma of Ar and oxygen or Ar and vapour at first, and then further growing the AZO film with a thickness of 500-600 nm at a growth speed slower than the previous speed by virtue of an independent Ar plasma and a higher ion equivalent, wherein the obtained AZO film with a total thickness of 600-700 nm has texture structure and morphology; an acid etching link in a conventional AZO texturization process is avoided; the thickness, and production and manufacturing costs needed by the AZO film are effectively reduced.

Description

technical field [0001] The invention relates to the field of photovoltaic cell glass, in particular to a method for preparing an AZO thin film glass with self-trapping light for the front electrode of a silicon-based thin film solar cell. Background technique [0002] The AZO thin film glass used for the front electrode of amorphous silicon / microcrystalline silicon thin film solar cells requires a textured structure, so as to achieve better light trapping effect, effectively increase the absorption of light and improve the photoelectric conversion efficiency of the cell. For the preparation of AZO films with a textured structure, the current mainstream preparation method is mainly to use the surface etchability of AZO films, first using magnetron sputtering technology, at a temperature greater than 300 ° C, to prepare electrical properties and optical properties. The AZO film with good performance is then etched on the surface to achieve surface texture. Surface etching can...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/23
Inventor 彭寿王芸马立云崔介东
Owner (CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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