Preparation method of transparent magnesium bismuth niobate film voltage-controlled varactor
A technology of magnesium bismuth niobate thin film and varactor, which is applied in ion implantation plating, metal material coating process, coating and other directions to achieve the effects of high transparency, good device stability and moderate tuning rate
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Embodiment 1
[0031] 1. Preparation of Bi by solid-state sintering method 1.5 MgNb 1.5 o 7 Target, press Bi with electronic balance 1.5 MgNb 1.5 o 7 The stoichiometric ratio of the corresponding elements is called Bi 2 o 3 , MgO and Nb 2 o 5 , Since the purity is 99%. After being fully mixed, it is pressed and formed under a pressure of 20Mpa, and finally placed in a box-type electric furnace to gradually raise the temperature to 1150°C and keep it warm for 5 hours.
[0032] 2. Clean the ITO glass substrate with N 2 Blow dry and place on magnetron sputtering sample stage.
[0033] 3. Pump the background vacuum of the magnetron sputtering system to 8.0×10 -6 Torr, and then heat the substrate, the substrate temperature is 400°C.
[0034] 4. With high purity (99.99%) Ar and O 2 As the sputtering gas, the flow ratio of argon and oxygen was 17:3. The sputtering gas pressure was 10 mTorr. The sputtering power is 150W, and the deposition is performed to obtain Bi 1.5 MgNb 1.5 o 7...
Embodiment 2
[0042] 1. Preparation of Bi by solid-state sintering method 1.5 MgNb 1.5 o 7 Target, press Bi with electronic balance 1.5 MgNb 1.5 o 7 The stoichiometric ratio of the corresponding elements is called Bi 2 o 3 , MgO and Nb 2 o 5 , Since the purity is 99%. After being fully mixed, it is pressed and formed under a pressure of 20Mpa, and finally placed in a box-type electric furnace to gradually raise the temperature to 1150°C and keep it warm for 5 hours.
[0043] 2. Clean the ITO glass substrate with N 2 Blow dry and place on magnetron sputtering sample stage.
[0044] 3. Pump the background vacuum of the magnetron sputtering system to 8.0×10 -6 Torr, and then heat the substrate, the substrate temperature is 400°C.
[0045] 4. With high purity (99.99%) Ar and O 2 As the sputtering gas, the flow ratio of argon and oxygen was 17:3. The sputtering gas pressure was 10 mTorr. The sputtering power is 150W, and the deposition is performed to obtain Bi 1.5 MgNb 1.5 o 7...
Embodiment 3
[0050] 1. Preparation of Bi by solid-state sintering method 1.5 MgNb 1.5 o 7 Target, press Bi with electronic balance 1.5 MgNb 1.5 o 7 The stoichiometric ratio of the corresponding elements is called Bi 2 o 3 , MgO and Nb 2 o 5 , Since the purity is 99%. After thorough mixing, press molding under the pressure of 20Mpa, and finally put it in a box-type electric furnace and gradually raise the temperature to 1180°C, and keep it warm for 5 hours.
[0051] 2. Clean the ITO glass substrate with N 2 Blow dry and place on magnetron sputtering sample stage.
[0052] 3. Pump the background vacuum of the magnetron sputtering system to 8.0×10 -6 Torr, and then heat the substrate, the substrate temperature is 600°C.
[0053] 4. With high purity (99.99%) Ar and O 2 As the sputtering gas, the flow ratio of argon and oxygen was 17:3. The sputtering gas pressure was 10 mTorr. The sputtering power is 200W, and the deposition is performed to obtain Bi 1.5 MgNb 1.5 o 7 Thin fil...
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