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Preparation method of transparent magnesium bismuth niobate film voltage-controlled varactor

A technology of magnesium bismuth niobate thin film and varactor, which is applied in ion implantation plating, metal material coating process, coating and other directions to achieve the effects of high transparency, good device stability and moderate tuning rate

Inactive Publication Date: 2016-04-20
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] With the development of human society, people put forward more requirements for electronic equipment. The traditional electronic equipment can no longer meet people's needs, so new electronic equipment emerges as the times require.

Method used

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  • Preparation method of transparent magnesium bismuth niobate film voltage-controlled varactor
  • Preparation method of transparent magnesium bismuth niobate film voltage-controlled varactor
  • Preparation method of transparent magnesium bismuth niobate film voltage-controlled varactor

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Experimental program
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Effect test

Embodiment 1

[0031] 1. Preparation of Bi by solid-state sintering method 1.5 MgNb 1.5 o 7 Target, press Bi with electronic balance 1.5 MgNb 1.5 o 7 The stoichiometric ratio of the corresponding elements is called Bi 2 o 3 , MgO and Nb 2 o 5 , Since the purity is 99%. After being fully mixed, it is pressed and formed under a pressure of 20Mpa, and finally placed in a box-type electric furnace to gradually raise the temperature to 1150°C and keep it warm for 5 hours.

[0032] 2. Clean the ITO glass substrate with N 2 Blow dry and place on magnetron sputtering sample stage.

[0033] 3. Pump the background vacuum of the magnetron sputtering system to 8.0×10 -6 Torr, and then heat the substrate, the substrate temperature is 400°C.

[0034] 4. With high purity (99.99%) Ar and O 2 As the sputtering gas, the flow ratio of argon and oxygen was 17:3. The sputtering gas pressure was 10 mTorr. The sputtering power is 150W, and the deposition is performed to obtain Bi 1.5 MgNb 1.5 o 7...

Embodiment 2

[0042] 1. Preparation of Bi by solid-state sintering method 1.5 MgNb 1.5 o 7 Target, press Bi with electronic balance 1.5 MgNb 1.5 o 7 The stoichiometric ratio of the corresponding elements is called Bi 2 o 3 , MgO and Nb 2 o 5 , Since the purity is 99%. After being fully mixed, it is pressed and formed under a pressure of 20Mpa, and finally placed in a box-type electric furnace to gradually raise the temperature to 1150°C and keep it warm for 5 hours.

[0043] 2. Clean the ITO glass substrate with N 2 Blow dry and place on magnetron sputtering sample stage.

[0044] 3. Pump the background vacuum of the magnetron sputtering system to 8.0×10 -6 Torr, and then heat the substrate, the substrate temperature is 400°C.

[0045] 4. With high purity (99.99%) Ar and O 2 As the sputtering gas, the flow ratio of argon and oxygen was 17:3. The sputtering gas pressure was 10 mTorr. The sputtering power is 150W, and the deposition is performed to obtain Bi 1.5 MgNb 1.5 o 7...

Embodiment 3

[0050] 1. Preparation of Bi by solid-state sintering method 1.5 MgNb 1.5 o 7 Target, press Bi with electronic balance 1.5 MgNb 1.5 o 7 The stoichiometric ratio of the corresponding elements is called Bi 2 o 3 , MgO and Nb 2 o 5 , Since the purity is 99%. After thorough mixing, press molding under the pressure of 20Mpa, and finally put it in a box-type electric furnace and gradually raise the temperature to 1180°C, and keep it warm for 5 hours.

[0051] 2. Clean the ITO glass substrate with N 2 Blow dry and place on magnetron sputtering sample stage.

[0052] 3. Pump the background vacuum of the magnetron sputtering system to 8.0×10 -6 Torr, and then heat the substrate, the substrate temperature is 600°C.

[0053] 4. With high purity (99.99%) Ar and O 2 As the sputtering gas, the flow ratio of argon and oxygen was 17:3. The sputtering gas pressure was 10 mTorr. The sputtering power is 200W, and the deposition is performed to obtain Bi 1.5 MgNb 1.5 o 7 Thin fil...

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Abstract

The invention discloses a preparation method of a voltage-controlled varactor made of transparent bismuth magnesium niobate thin films. The preparation method comprises following steps: Bi1.5MgNb1.5 O7 target material is prepared by solid state sintering method, wherein the firing temperature is 1150 to 1180 DEG C; a clean and dry indium tin oxid glass substrate is placed on a magnetron sputtering sample stage, Ar and O2 are used as sputtering gases, the Bi1.5MgNb1.5 O7 thin films are obtained by deposition, and then the Bi1.5MgNb1.5 O7 thin films are added into a furnace in oxygen atmosphere for post-annealing treatment; and metal electrodes are prepared on the Bi1.5MgNb1.5 O7 thin films by using mask version. Transparency of the varactor is high; tunability is moderate, device stability is high, preparation technologies are simple, electrode performances are excellent, no heavy metal poisoning or pollution is caused in preparation processes, and application prospect is promising.

Description

technical field [0001] The invention belongs to the field of electronic information materials and components, in particular to a preparation method for a transparent voltage-controlled varactor. Background technique [0002] The rapid development of wireless communication technology puts forward higher requirements for microwave components such as wide frequency bandwidth, large capacity, small size, easy integration, and frequency adaptation. Tunable microwave devices are widely used in microwave communication systems due to their frequency agility characteristics, mainly including phase shifters, adaptive matching networks, electronically adjustable filters, voltage-controlled oscillators, electronically controlled attenuators, microwave switches, Amplifier etc. The use of tunable microwave devices increases the functionality and utility of the circuit and reduces the size and cost of the circuit. In radio frequency circuits, the use of tunable microwave devices can impr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 李玲霞于仕辉董和磊许丹金雨馨
Owner TIANJIN UNIV
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