GaN Schottky diode based on modulation doping

Abstract

The invention discloses a GaN Schottky diode based on modulation doping, belonging to the field of a semiconductor device. The GaN Schottky diode comprises a semi-insulated substrate layer, a high-doped N+ type GaN layer and an N- type GaN layer, wherein the substrate layer is used for supporting the whole GaN Schottky diode; the N+ type GaN layer is grown on the substrate layer; and the N- type GaN layer adopts the modulation doping to grow on the N+ type GaN layer. The doping concentrations of the N- type GaN layer are non-uniformly distributed from the interface of the N+type GaN layer, an Ohmic contact electrode is grown on the N+ type GaN layer, and a Schottky contact electrode is grown on the N- type GaN layer. The N- type GaN layer is grown on the N+ type GaN layer in the modulation doping mode, the migration rate of a GaN material is increased, the electronic concentration distribution in the material is improved, the Schottky junction capacitance of the diode is reduced, the working frequency of the diode is increased, and therefore the working frequency and the output power of a frequency doubling circuit in a millimeter wave and terahertz range are increased. The variable capacitance rate of the Schottky diode can be effectively controlled by controlling the modulation doping, and the Q value of a device is increased.

Description

technical field [0001] The invention belongs to the field of semiconductor devices. Background technique [0002] Schottky frequency doubler diode devices based on traditional semiconductor materials such as Si and GaAs are limited by the properties of the material itself, so it is difficult to further improve the corresponding indicators such as power and breakdown voltage. In recent years, a new generation of wide-bandgap semiconductor materials represented by group III nitrides has developed rapidly. It has excellent material properties such as wide band gap, high saturated electron drift velocity, high breakdown field strength and high thermal conductivity, and has great development potential in the field of millimeter wave and submillimeter wave high-power electronic devices. Research on GaN-based Schottky varactor millimeter-wave and submillimeter-wave frequency doubling devices is currently a hot spot in the world, and domestic research is still at a very low frequen...

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Problems solved by technology

However, there is no work on modulating Schottky diodes doped with GaN materials at home and abroad.

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