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Band gap reference voltage source

A reference voltage source, reference technology, applied in the direction of adjusting electrical variables, control/regulating systems, instruments, etc., to achieve the effect of saving layout area, simple circuit structure, and improving accuracy

Inactive Publication Date: 2013-11-27
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is to propose a bandgap reference voltage source for the above-mentioned problems of the traditional bandgap reference voltage source

Method used

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Examples

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Embodiment

[0033] This example is a specific embodiment according to the above principle of the present invention, in image 3 basis, all switches are implemented using NMOSFETs, such as Figure 4 As shown, the bias circuit includes a first PMOS transistor P1, a second PMOS transistor P2, a third PMOS transistor P3, a fourth PMOS transistor P4, a first NMOS transistor N1, a second NMOS transistor N2, and a third NMOS transistor N3 , the fourth NMOS transistor N4, the fifth NMOS transistor N5 and the sixth NMOS transistor N6, the bandgap reference core circuit includes the fifth PMOS transistor P5, the sixth PMOS transistor P6, the first PNP type bipolar transistor Q1 and the second PNP type double-click transistor Q2, the temperature detection circuit includes a seventh PMOS transistor P7, an eighth PMOS transistor P8, a ninth PMOS transistor P9, a tenth PMOS transistor P10, an eleventh PMOS transistor P11, a twelfth PMOS transistor P12, The seventh NMOS transistor N7, the eighth NMOS t...

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Abstract

The invention relates to the technique of simulation integrated circuits, in particular to a band gap reference voltage source. The band gap reference voltage source comprises a biasing circuit, a band gap reference core circuit, a temperature detecting circuit, a switch capacitive circuit and an operational amplifier, wherein the biasing circuit supplies currents to the band gap reference core circuit, the output end of the band gap reference core circuit is connected with the input end of the switch capacitive circuit, the temperature detecting circuit is connected to a branch circuit of the band gap reference core circuit, the synclastic input end and the reverse input end of the operational amplifier are connected with the switch capacitive circuit, and the output end of the operational amplifier is connected with one output end of the switch capacitive circuit and serves as the output end of the reference voltage source. The band gap reference voltage source has the advantages that accuracy of output voltage of the first-order compensation band gap reference voltage source is improved, large resistors are not used, the circuit structure is simple, the layout area is saved, and cost is lowered. The band gap reference voltage source is particularly suitable for reference voltage sources.

Description

technical field [0001] The invention relates to analog integrated circuit technology, in particular to a bandgap reference voltage source. Background technique [0002] With the development of integrated circuit manufacturing technology towards deep submicron, integrated circuit design and manufacturing tend to be more precise, high density and low cost. In almost all analog integrated circuits, the reference voltage source or reference current source circuit is an essential circuit module, such as A / D, D / A conversion circuit, voltage adjustment circuit, flash memory and other circuits. The reference voltage source with high precision, high power supply rejection ratio and low temperature coefficient is especially important to improve the performance of the whole chip. [0003] Traditional bandgap voltage reference circuits such as figure 1 As shown, the bandgap voltage reference source circuit includes: PMOS transistors M1, M2, M3, bipolar transistors PQ1, PQ2, and PQ3, r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/567
Inventor 方健彭宜建潘华谷洪波袁同伟黄帅
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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