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Polysilanesiloxane copolymers and method of converting to silicon dioxide

A polysilane siloxane, silicon dioxide technology, used in coatings, electrical components, circuits, etc., can solve problems such as high weight loss and high shrinkage

Inactive Publication Date: 2013-11-27
DOW CORNING CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unfortunately, removal of these organic groups leads to undesirably high weight loss, high shrinkage and formation of porosity in the formed silica layer

Method used

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  • Polysilanesiloxane copolymers and method of converting to silicon dioxide
  • Polysilanesiloxane copolymers and method of converting to silicon dioxide
  • Polysilanesiloxane copolymers and method of converting to silicon dioxide

Examples

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example 1

[0029] Example 1-Preparation of monomer

[0030] In this example, 261 grams of Si(SiCl 3 ) 4 Mix with 448ml methanol. All low-boiling by-products in the reaction mixture were removed, and then a total of 209 grams of crude methoxylated product was obtained. The crude product was remixed into 1154 ml of methanol for a predetermined amount of time in order to purify the product. After removing the methanol, a total of 206g of high purity Si[Si(OMe) 3 ] 4 . Monomer Si [Si(OMe) obtained from this reaction 3 ] 4 The purity is greater than 90%, and the overall yield is about 87%. Use gas chromatography (GC), gas chromatography-mass spectrometry (GC-MS), nuclear magnetic resonance (NMR), Raman spectroscopy and ultraviolet-visible spectroscopy to verify the structure and purity of the product. Those skilled in the art will understand that GC, GC-MS, NMR, Raman spectroscopy, and ultraviolet-visible spectroscopy are conventional techniques used to verify the composition and purity of m...

example 2

[0031] Example 2-Preparation of PSSX Copolymer

[0032] In this example, SiOMe:H was used in 70.37 grams of ethanol 2 10.55 g 0.1N HCl with an O molar ratio of 1:1.5 will be 16.66 g Si(Si(OMe) 3 ] 4 Hydrolyzed at room temperature for 3 hours to form a PSSX copolymer. Then 138.22 grams of PGMEA was added, and the solution was concentrated to 51.20 grams to obtain a stable 15% by weight resin solution. See now Figure 4 , The separation of PSSX copolymer in PGMEA solvent in an elution time between about 15.5 minutes and 19.0 minutes was shown by gel permeation chromatography (GPC). Those skilled in the art will understand that the measured response of the GPC detector can be converted into a weight percentage, while the precise calibration of the instrument can convert the elution time into a molecular weight scale. The PSSX copolymer prepared in this example has a number average molecular weight of approximately 1500 amu (M n ) And a weight average molecular weight of about 350...

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Abstract

Inorganic polysilanesiloxane (PSSX) copolymers and method of making and applying the same to the surface of a substrate is provided. These PSSX copolymers are beneficial in forming a dense silicon dioxide layer on a substrate under mild oxidative conditions. The PSSX copolymers comprise SixOy(OH)z units, wherein y and z are defined by the relationship (2y + z) < (2x + 2) and x is either 4 or 5. More specifically, the PSSX copolymers do not contain Si-C covalent bonds.

Description

Technical field [0001] The present invention generally relates to inorganic polysilane-polysiloxane resins and their use in electronic devices. More specifically, the present invention relates to the preparation of polysilanesiloxane (PSSX) copolymers and a method for using these copolymers to form a spin-coated film that can be converted into a dense silica layer under mild conditions. Background technique [0002] Dense silica (SiO 2 The) layer is usually used as a dielectric or barrier material in electronic devices. These dense layers can be formed using a chemical vapor deposition (CVD) method or a spin-on deposition (SOD) method. In the CVD method, volatile precursors react in the gas phase, so that silicon dioxide is deposited directly on the surface of the electronic device. Alternatively, the SOD method involves applying a resin precursor to the surface of an electronic device. These resin precursors form a thin film on the surface, which is then oxidized to form sili...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G77/48C09D183/14
CPCC08G77/52C08G77/48C09D1/00H01L21/02164H01L21/02282C09D183/14
Inventor 萧冰·周
Owner DOW CORNING CORP