Programming system and method of Nor Flash memory

Abstract

The invention relates to a programming system and a programming method of a Nor Flash memory. The programming system comprises a plurality of memory units, a bit line programming driving module, a word line programming driving module and a feedback control module, wherein the bit line programming driving module is used for applying bit line programming voltage with a fixed value to a drain electrode of each memory unit of a programming object; the word line programming driving module is used for applying word line programming voltage with an initial value to a control grid electrode of each memory unit of the programming object; the feedback control module is used for detecting the programming current of each memory unit of the programming object and outputting a feedback control signal to the word line programming driving module according to the detected programming current; and the word line programming driving module is also used for adjusting the voltage value of the word line programming voltage according to the feedback control signal so as to control the programming current to maintain basically unchanged. By implementing the programming system and the programming method of the Nor Flash memory, multibyte memory units can be programmed simultaneously and the total programming time of the Nor Flash memory can be reduced greatly, so that programming efficiency is improved.

Description

technical field [0001] The present invention relates to the technical field of nonvolatile memory, and more specifically, relates to a programming system and method of a Nor Flash memory. Background technique [0002] With the development of electronic information technology, electronically programmable and erasable non-volatile memory technology is widely used in various electronic products. The common types are EEPROM and flash memory, while Nor Flash and Nand Flash are the two main non-volatile flash memory technologies currently on the market. In the prior art, EEPROM and Nand Flash generally use F-N tunneling to program memory cells. Different from this, Nor Flash uses channel hot electron injection (Channel Hot Electron Injection) to program memory cells. However, at present, the programming current of the traditional hot electron injection method is much larger than that of the F-N tunneling method, which also determines that Nor Flash cannot simultaneously program ...

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved in the present invention is, aiming at the defect that multi-byte Nor Flash memory cells cannot be programmed simultaneously in the prior art, a programming system and method for Nor Flash memories are provided, which can improve the efficiency of the bit line charge pump , can program multi-byte memory cells at the same time, and can greatly reduce the total programming time of Nor Flash memory to improve programming efficiency

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