Ion implantation method and device, field-effect tube manufacturing method and field-effect tube

Abstract

The invention discloses an ion implantation method which is used for implanting ions better and is simple in manufacturing process. The method comprises the steps that etching is conducted on an epitaxial layer on a substrate and a protective layer on the epitaxial layer, so that a groove is formed in the epitaxial layer; the etching width is a first width value; P type ions are implanted into the lateral wall of the groove with a first angle, the first angle is an included angle formed between a connection line and the lateral wall, wherein the connection line is formed between the depth point reached by the P type ions on the lateral wall of the groove and the top point of the protecting layer facing to the lateral wall, and the top point is away from the epitaxial layer; the P type ions are diffused to the outer side of the groove and diffused into the epitaxial layer to form a P type drifting area; a first medium layer is manufactured, the first medium layer covers the protecting layer and the groove, and the first medium layer and the protecting layer on the surface of the epitaxial layer are removed. The invention further discloses an ion implantation device, a field-effect tube manufacturing method and system and a field-effect tube.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing and machinery, in particular to an ion implantation method and equipment, a field effect tube manufacturing method and a field effect tube. Background technique [0002] Super junction MOSFET (super junction metal-oxide layer-semiconductor-field effect transistor), also known as COOL MOSFET, has greater advantages in terms of breakdown voltage and on-resistance than conventional power MOSFETs. The structure of ordinary power MOSFET is as Figure 1A As shown, the structure of COOL MOS is as Figure 1B shown. [0003] However, for devices with COOL MOS structure, the longitudinal dimension of the P-type drift region (P-drift) is generally deep, generally about 50 μm, such as Figure 1B As shown, and the lateral size of the P-type drift region may be small, making it more difficult to manufacture. in, Figure 1B The S in represents the source, and the D represents the drain. There are ...

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Problems solved by technology

Although this method is simpler than the first method, but to make the implanted ions penetrate tens of microns into the epitaxial layer, the implantation energy must reach at least tens of MeVs, and most of the current ion implanters simply cannot reach this level. energy, so this method requires high equipment and is difficult to implement

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