A method for metal plasma immersion ion implantation and deposition of insulating material

A metal plasma and immersion ion implantation technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of equipment damage, inability to achieve neutralization of accumulated charges on the surface of insulating materials, and ignition, etc. Achieve the effect of reducing the degree of charge accumulation, improving the implantation effect, and increasing the energy of ion implantation

Active Publication Date: 2018-03-16
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to solve the problem that the neutralization of the accumulated charge on the surface of the insulating material cannot be achieved when the existing metal plasma immersion ion implantation is performed on the insulating material. It will damage the equipment, and provide a method for metal plasma immersion ion implantation and deposition of insulating materials

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  • A method for metal plasma immersion ion implantation and deposition of insulating material
  • A method for metal plasma immersion ion implantation and deposition of insulating material
  • A method for metal plasma immersion ion implantation and deposition of insulating material

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specific Embodiment approach 1

[0025] Specific embodiment 1: This embodiment is an insulating material metal plasma immersion ion implantation and deposition device including a gas plasma source 1, a metal grid 2, a high-voltage target 3, an insulating workpiece to be processed 4, and a negative high-voltage pulse source 5. , Magnetic conduit 6, metal cathode arc plasma source 7, vacuum chamber 8 and air inlet 9;

[0026] The vacuum chamber 8 is provided with a metal grid 2, a high-voltage target platform 3, and an insulated workpiece 4 to be processed; the insulated workpiece 4 to be processed is installed above the high-voltage target platform 3, and the metal grid 2 is covered above the high-voltage target platform 3. And it is connected with the high-voltage target stage 3;

[0027] The gas plasma source 1 and the gas inlet 9 are respectively communicated with the vacuum chamber 8;

[0028] The negative high voltage pulse source 5 is connected to the high voltage target platform 3;

[0029] The magnetic condui...

specific Embodiment approach 2

[0036] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the insulating workpiece 4 to be processed is alumina ceramic, polytetrafluoroethylene, nylon or organic glass. Others are the same as the first embodiment.

specific Embodiment approach 3

[0037] Specific embodiment 3: The difference between this embodiment and specific embodiments 1 or 2 is that the material of the metal grid 2 is stainless steel, titanium metal or copper metal. Others are the same as the first or second embodiment.

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Abstract

A metal plasma immersion ion implantation and deposition device for an insulating material and a method for implanting and depositing the same, relating to an ion implantation treatment device and method. The purpose of the present invention is to solve the problem that the neutralization of the accumulated charge on the surface of the insulating material cannot be achieved when the existing metal plasma immersion ion implantation is performed on the insulating material. Problems that can damage the device. The device includes a gas plasma source, a metal grid, a high-voltage target table, an insulating workpiece to be processed, a negative high-voltage pulse source, a magnetic guide, a metal cathode arc plasma source and a vacuum chamber. Method: Introduce argon gas into the vacuum chamber, turn on the gas plasma source, adjust the power of the gas plasma source to 200W-400W, set the working parameters, start, and complete the injection and deposition method. The invention is suitable for large-area metal ion implantation and deposition on the surface of insulating materials.

Description

Technical field [0001] The invention relates to an ion implantation processing device and method. Background technique [0002] Metal plasma immersion ion implantation is to introduce metal plasma into a vacuum processing chamber through a magnetic conduit. The workpiece is immersed in the plasma. Under the action of the pulse negative bias, the ions are accelerated and injected into the surface of the workpiece. At present, MePIII technology has been widely used in the surface modification of metals and semiconductors. However, for the insulating material itself, the conductivity is poor, and it is usually necessary to use a metal target to provide a pulsed negative bias to achieve ion implantation on the surface of the insulating material. However, due to the self-capacitance effect of the insulating material and the accumulation of positive charges on the surface of the insulating material during ion implantation, the surface potential of the insulating material is reduced, an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/48C23C14/18
Inventor 王浪平朱明冬宋法伦
Owner HARBIN INST OF TECH
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