Method for fabricating semiconductor device and adjusting substrate temperature in integrated system
An integrated system and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of insufficient manipulators, long-term occupation, increased equipment costs, etc., to ensure repeatability and stability, reduce The effect of idle waiting time and production cost reduction
Active Publication Date: 2016-09-14
理想万里晖真空装备(泰兴)有限公司
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[0010] However, the above-mentioned methods all have many disadvantages: in method 1 and method 3, the substrate is naturally cooled in a vacuum environment, not only the cooling time is long, which seriously affects the productivity of the PECVD integrated system, but also the method 1 will occupy the transfer chamber for a long time. In the second method, the substrate is cooled in a special cooling chamber, and it is not only necessary to add a new chamber to the PECVD integrated system room, increasing equipment costs, and if the manipulator cannot transfer the cooled substrate in time due to being occupied, the temperature of the substrate will be lower than the process temperature required for microcrystalline silicon thin film deposition
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[0043] figure 1 It is the flow chart of the present invention making semiconductor devices in the vacuum processing integrated system, as figure 1 As shown, the manufacturing method of the semiconductor device includes:
[0044] S1: placing the substrate in the first processing chamber;
[0045] S2: performing a first treatment on the substrate;
[0046] S3: placing the first processed substrate in the second processing chamber;
[0047] S4: introducing heat transfer gas into the second processing chamber, and controlling the pressure of the second processing chamber to reach a preset pressure;
[0048] S5: keeping the pressure of the second processing chamber at a preset pressure for a period of time;
[0049] S6: performing a second treatment on the substrate.
[0050] The technical solution of the present invention will be described clearly and completely through specific embodiments below in conjunction with the accompanying drawings. Apparently, the described embodim...
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Provided is a method for manufacturing semiconductor devices and adjusting substrate temperature in an integrated system. The integrated system is a vacuum treatment integrated system. The method for manufacturing the semiconductor devices includes the steps of placing a substrate in a second processing chamber with a second temperature after the substrate is subjected to the first processing in a first processing chamber with a first temperature, then bringing heat conduction gas to the second processing chamber so as to enable the pressure of the second processing chamber to reach a preset pressure and enable the second processing chamber to keep for a period of time within the preset pressure, and cooling the substrate due to the fact that the heat of the substrate can be taken away under the action of the heat conduction gas, or heating up the substrate due to the fact that the heat of the substrate is supplemented. Therefore, the temperature of the substrate can be rapidly, stably and accurately adjusted to the needed temperature on the premise that a cooling chamber is not used, and the method can ensure reproducibility and stability of the second treatment process in the manufacturing process of the semiconductor devices.
Description
technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular relates to a method for adjusting the temperature of a substrate; in addition, the invention also relates to a method for manufacturing semiconductor devices in a vacuum processing integrated system. Background technique [0002] Semiconductor device manufacturing is to perform a series of complex chemical or physical processes on substrates (such as silicon wafers). In short, these processes can be divided into four basic categories: thin film fabrication, photolithography, etching, and doping. After the substrate is processed in one semiconductor device, it is often necessary to transport the substrate to another semiconductor device for further processing on the substrate until the semiconductor device is formed. In order to reduce the manufacturing time of semiconductor devices and save the physical space occupied by semiconductor device manufacturing equipment, so...
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IPC IPC(8): H01L21/67
Inventor 郭雷
Owner 理想万里晖真空装备(泰兴)有限公司