Solar cell element and solar cell module
A technology of solar cells and components, applied in electrical components, circuits, photovoltaic power generation, etc., can solve problems such as insufficient power generation efficiency, and achieve the effect of high open circuit voltage and excellent output characteristics
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Embodiment 1
[0103] Embodiment 1: The above-mentioned semiconductor substrate 1 was placed in a film forming chamber, and the surface temperature of the semiconductor substrate 1 was heated to about 180°C. Next, trimethylaluminum gas and a carrier gas composed of nitrogen gas are supplied to the semiconductor substrate 1 for 0.5 seconds to adsorb the aluminum raw material on the second main surface 1d side of the semiconductor substrate 1 (step 1). Next, the aluminum raw material in the space was removed by purging the film-forming chamber with nitrogen gas for 1.0 second, and the aluminum raw material adsorbed on the second surface 10b side was removed except for components adsorbed at the atomic level (step 2). Next, an oxidizing agent composed of ozone gas and a carrier gas composed of nitrogen gas are supplied together into the film-forming chamber for 4.0 seconds to remove CH as an alkyl group of trimethylaluminum as an aluminum raw material. 3 , and dangling bonds of aluminum were ox...
Embodiment 2
[0104] Example 2: After forming the first region 81 of an amorphous aluminum oxide layer with a thickness of 20 nm under the same conditions as in Example 1, the substrate temperature was set to 280° C., and under the same conditions as in Example 1 above, Next, a second region 82 made of a crystalline alumina layer with a thickness of 10 nm was formed. By TEM observation, it was confirmed that 80% of the crystalline substance existed in the second region 82 .
Embodiment 3
[0105] Embodiment 3: Before forming the passivation layer 8, the silicon oxide layer 9 is formed by nitric acid oxidation. In this nitric acid oxidation method, after the natural oxide film formed on the semiconductor substrate 1 is removed by hydrofluoric acid treatment, the semiconductor substrate 1 is immersed in a nitric acid solution having a concentration of 68% by mass and heated to 120°C. 1 is formed with a silicon oxide layer 9 with a thickness of 5 nm. Thereafter, a passivation layer 8 having a thickness of 30 nm was formed in the same manner as in Example 1. In addition, it was confirmed by TEM observation that no crystalline substance exists in the aluminum oxide layer 8 .
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