Array substrate, manufacturing method of array substrate and display device

A technology of an array substrate and a manufacturing method, which are applied in the fields of an array substrate and a manufacturing method thereof and a display device, can solve the problems of affecting the performance of TFT, the metal electrode is easily oxidized, the resistance of the metal electrode is increased, and the like, and the effect of ensuring the performance is achieved.
CN103441129AInactive Publication Date: 2013-12-11BOE TECH GRP CO LTD +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
BOE TECH GRP CO LTD
Publication Date
2013-12-11
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides an array substrate, a manufacturing method of the array substrate and a display device and belongs to the technical field of displaying. The manufacturing method of the array substrate includes the steps that a metal layer is formed on the substrate, and metallic oxide on the surface of the metal layer is removed. According to the technical scheme, the metal oxide on the surface of a metal electrode can be removed, and the performance of a thin film transistor on the array substrate is improved.
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Description

technical field

[0001] The present invention relates to the field of display technology, in particular to an array substrate, a manufacturing method thereof, and a display device. Background technique

[0002] With the continuous advancement of technology, users' demand for liquid crystal display equipment is increasing, and TFT-LCD (Thin Film Transistor-Liquid Crystal Display, Thin Film Field Effect Transistor Liquid Crystal Display) has also become the mainstream display used in mobile phones, tablet computers and other products.

[0003] The performance of a thin film transistor (TFT) determines the display quality of a liquid crystal display. The existing TFT array substrate generally includes a substrate substrate, a common electrode, a gate electrode, a gate insulating layer, a semiconductor layer, an ohmic contact layer, a source electrode, and a leakage current. electrode, passivation layer and pixel electrode, wherein the gate electrode, source electrode and drain e...

Claims

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