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In-situ hydroxylation system

A hydroxide and chamber technology, applied in the direction of gaseous chemical plating, coating, metal material coating process, etc.

Inactive Publication Date: 2013-12-11
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, processes involving the mixing of ammonia and water have not been performed in processing chambers due to the expected degradation of metal parts

Method used

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Embodiment Construction

[0026] Various embodiments described herein provide methods and apparatus for hydroxylation of substrate surfaces without exposure to air, thereby avoiding degradation of hysteresis in devices containing dielectric films. Embodiments of the present invention relate to the provision of processes and apparatus that can be implemented in a process area of ​​a chamber that avoids exposing the substrate to ambient air.

[0027] As used herein, "substrate surface" refers to any substrate or material surface formed on a substrate on which a film treatment is performed during a manufacturing process. For example, depending on the application, substrate surfaces on which processing can be performed include materials such as silicon, silicon oxide, strained silicon, silicon-on-insulator (SOI), carbon-doped silicon oxide, silicon nitride, doped silicon, germanium, germanium arsenide , glass, sapphire, and any other material such as metals, metal nitrides, metal alloys, and other conducti...

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Abstract

Described are systems and methods for the Hydroxylation of a substrate surface using ammonia and water vapor.

Description

technical field [0001] Embodiments of the invention generally relate to systems and methods for generating hydroxyl groups on the surface of a substrate. Background technique [0002] Deposition of thin films on substrate surfaces is an important process in various industries including semiconductor processing, diffusion barrier coatings, and dielectrics for magnetic read / write heads. In the semiconductor industry, miniaturization can involve atomic-level control of thin film deposition to produce conformal coatings on high aspect ratio structures. One method for thin film deposition with atomic layer control and conformal deposition is atomic layer deposition (ALD), which utilizes sequential self-limiting surface reactions to form thin films with precise thicknesses that are precisely controlled at the angstrom or monolayer level. multiple layers. Most ALD processes are based on binary reaction sequences that deposit binary compound films. Each of these two surface react...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205
CPCC23C16/02C23C16/45544C23C16/0272
Inventor K·崔T·E·萨托E·乌略亚
Owner APPLIED MATERIALS INC