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Back-illuminated solid-state imaging element, method for producing same, and imaging device

一种固态图像、感测元件的技术，应用在辐射控制装置、电气元件、图像通信等方向，能够解决混色或串扰减少、面积大、红光泄漏等问题，达到减少串扰的效果

Inactive Publication Date: 2013-12-11
FUJIFILM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is likely that red light will leak into adjacent pixels causing color mixing or crosstalk
[0004] For this reason, in the prior art, as described in Patent Document 1, the light-receiving area of ​​a pixel is set to decrease in the order of R pixel, G pixel, and B pixel, thereby being used for receiving Light red (R) pixels have a larger area, resulting in less color mixing or crosstalk

Method used

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  • Back-illuminated solid-state imaging element, method for producing same, and imaging device
  • Back-illuminated solid-state imaging element, method for producing same, and imaging device
  • Back-illuminated solid-state imaging element, method for producing same, and imaging device

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Embodiment Construction

[0022] Embodiments of the present invention will be described below with reference to the drawings.

[0023] figure 1 is a functional configuration block diagram of a digital camera (imaging device) having a solid-state image sensing element according to an embodiment of the present invention. The digital camera 10 includes an imaging optical system 21 , and an imaging element chip 22 arranged at the next stage of the imaging optical system 21 . The imaging optical system 21 includes an imaging lens 21 a, a diaphragm 21 b, a mechanical shutter (not shown), and the like. There are also models that do not have a mechanical shutter.

[0024] The imaging element chip 22 includes a signal reading unit including a back-illuminated solid-state image sensing element 22a for acquiring a color image and is a CCD type, a CMOS type, or the like, an analog image output to the back-illuminated solid-state image sensing element 22a An analog signal processing unit (AFE) 22b for performing...

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Abstract

A back-illuminated solid-state imaging element (22a), wherein light is scattered by a filter (52), the surface area of surface sides (60-1, 60R-1) of each pixel are formed to be the same irrespective of the color of light incident on each pixel, and the surface area of a reverse side (60R-4) of a pixel where scattered red light is incident is formed so as to be greater than the surface area of a reverse side (60-R) of a pixel where green or blue light is incident.

Description

technical field [0001] The present invention relates to a back-illuminated solid-state image sensing element, a method of manufacturing a back-illuminated solid-state image sensing element, and an imaging device. Background technique [0002] For example, in a solid-state imaging device that has color filters of primary colors (R (red), G (green), and B (blue)) and acquires color images, pixels for red detection are arranged on a semiconductor substrate (as photodiode of the photoelectric conversion element), a pixel for green detection, and a pixel for blue detection. On each pixel, a microlens (top lens) is stacked, and incident light collected by each microlens enters a pixel corresponding to the microlens through a corresponding color filter. [0003] Recently, as the number of pixels increases, solid-state image sensing elements having ten million or more pixels have become the norm. For this reason, each pixel is miniaturized, and the size of each pixel is also appro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L27/14H04N5/369H04N25/00H04N23/12
CPCH01L27/14621H01L27/1464H01L27/14627H01L27/14683H04N25/134H04N25/702
Inventor 高桥周
Owner FUJIFILM CORP