Method for preparing copper-aluminum-sulfur film
A photoelectric thin film, copper aluminum sulfur technology, applied in the direction of circuit, electrical components, final product manufacturing, etc., can solve the problems of complex process route and high production cost, and achieve the effect of low equipment requirements, low production cost and easy operation
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Embodiment 1
[0030] b. Mix 1 part of CuCl 2 2H 2 O, 2.200 parts Al(NO 3 ) 3 9H 2 O into a glass bottle, add 39.789 parts of deionized water and 26.526 parts of ammonia water, and use ultrasonic vibration for more than 30 minutes to mix the substances in the solution evenly.
[0031] c. Drop the above solution onto the silicon substrate placed on the homogenizer, then start the homogenizer, rotate the homogenizer at 200 rpm for 5 seconds, and rotate at 3000 rpm for 15 seconds, so that the dripped solution is coated After the cloth is evenly distributed, the substrate is dried, and then the above-mentioned solution is repeatedly dripped and spin-coated, and then dried again. This is repeated 10 times, and a precursor thin film sample with a certain thickness is obtained on the substrate.
[0032]d. Put the precursor film sample obtained by the above process into an airtight container, and put 1.449 parts of hydrazine hydrate and 0.375 parts of sublimated sulfur. For sulfur contact, put ...
Embodiment 2
[0036] b. Mix 1 part of CuCl 2 2H 2 O, 2.200 parts Al(NO 3 ) 3 9H 2 Put O into a glass bottle, 39.789 parts of ethylene glycol, and use ultrasonic vibration for more than 30 minutes to mix the substances in the solution evenly.
[0037] c. Drop the above solution onto the glass substrate placed on the homogenizer, and then start the homogenizer. The homogenizer rotates at 500 rpm for 9 seconds, so that the dripped solution is evenly coated, and then the substrate is baked. After drying, the aforementioned solution was dripped and spin-coated again and then dried again, and this was repeated 10 times, thus obtaining a precursor thin film sample with a certain thickness on the glass substrate.
[0038] d. Put the precursor thin film sample obtained by the above process into a sealable container, and put 1.449 parts of hydrazine hydrate and 0.375 parts of sublimed sulfur, place the precursor thin film sample on the support so that it does not contact with hydrazine hydrate, p...
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