ITO surface micro-nano structure processing method

A technology of micro-nano structure and processing method, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of low square resistance, affecting the external quantum efficiency of LEDs, restricting light output, etc., and achieves feasible and simple operation. , the effect of increasing the luminous efficiency

Inactive Publication Date: 2013-12-25
KUNSHAN AODELU AUTOMATION TECH
View PDF4 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As an N-layer semiconductor, ITO (Indium Tin Oxide) is widely used in the front-end process of LED chips because of its simple manufacturing process, good light transmission, low square resistance, and good lateral expansion of current. Large refracti

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] A processing method for ITO surface micro-nano structure, comprising the following steps:

[0015] (1) Evaporate ITO on the cleaned epitaxial wafer;

[0016] (2) Send the epitaxial wafer coated with ITO on the surface to the yellow light for uniform glue, and use the proximity exposure method to copy the micro-nano structure on the surface of the mask plate to the surface of the colloid, and finally develop it;

[0017] (3) The finished product after development is subjected to ITO wet etching. In order to better etch the above pattern, a step-by-step etching method is used here for processing; the step-by-step etching method is: the first step During etching, the temperature of the ITO etching solution is 45°C, and the etching time is 30s. During the second etching, the temperature of the ITO etching solution is room temperature, and the etching time is 30s;

[0018] (4) After the wet etching is completed, remove the colloid on the surface of the ITO, and then send th...

Embodiment 2

[0020] A processing method for ITO surface micro-nano structure, comprising the following steps:

[0021] (1) Evaporate ITO on the cleaned epitaxial wafer;

[0022] (2) Send the epitaxial wafer coated with ITO on the surface to the yellow light for uniform glue, and use the proximity exposure method to copy the micro-nano structure on the surface of the mask plate to the surface of the colloid, and finally develop it;

[0023] (3) The finished product after development is subjected to ITO wet etching. In order to better etch the above pattern, a step-by-step etching method is used here for processing; the step-by-step etching method is: the first step During etching, the temperature of the ITO etching solution is 50°C, and the etching time is 45s. During the second etching, the temperature of the ITO etching solution is room temperature, and the etching time is 45s;

[0024] (4) After the wet etching is completed, remove the colloid on the surface of the ITO, and then send th...

Embodiment 3

[0026] A processing method for ITO surface micro-nano structure, comprising the following steps:

[0027] (1) Evaporate ITO on the cleaned epitaxial wafer;

[0028] (2) Send the epitaxial wafer coated with ITO on the surface to the yellow light for uniform glue, and use the proximity exposure method to copy the micro-nano structure on the surface of the mask plate to the surface of the colloid, and finally develop it;

[0029] (3) The finished product after development is subjected to ITO wet etching. In order to better etch the above pattern, a step-by-step etching method is used here for processing; the step-by-step etching method is: the first step During etching, the temperature of the ITO etching solution is 48°C, and the etching time is 38s. During the second etching, the temperature of the ITO etching solution is room temperature, and the etching time is 38s;

[0030] (4) After the wet etching is completed, remove the colloid on the ITO surface, and then send the above...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an ITO surface micro-nano structure processing method. Firstly, ITO evaporation is performed on a cleaned epitaxial wafer, then the product is conveyed to yellow light, colloid evening, exposure and developing are performed, so that a micro-nano structure on a mask is replicated to the ITO surface, next, an ITO etching liquor step-by-step etching is used for performing wet etching on ITO without protection of colloid, finally, after colloid removal, the ITO is soaked into BOE solution for vibration etching, and therefore kinds of micro-nano structures are formed on the ITO surface. The operation is easy and practicable, by the utilization of the ITO step-by-step etching and the BOE solution, a rough diffuse reflection layer of the micro-nano structures is formed on the ITO surface in an etching mode, so that the light-emitting efficiency of an LED chip is improved.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a method for treating micro-nano structures on the surface of ITO. Background technique [0002] In today's increasingly scarce energy, LED has more and more applications in outdoor backlighting, lighting and other fields due to its unique advantages such as low energy consumption, long service life, simple structure, and ease of use. As an N-layer semiconductor, ITO (Indium Tin Oxide) is widely used in the front-end process of LED chips because of its simple manufacturing process, good light transmission, low square resistance, and good lateral expansion of current. Large refractive index difference, so when the light exits from the inside of the LED chip, it is easy to form a total reflection angle at the interface between ITO and air, which restricts the exit of light, thereby affecting the external quantum efficiency of the LED. [0003] Therefore, a new technical so...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/308H01L33/10H01L33/22
Inventor 郁彬
Owner KUNSHAN AODELU AUTOMATION TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap