Dry etching lower electrode and dry etching device

Abstract

The embodiment of the invention provides a dry etching lower electrode and a dry etching device and belongs to the technical field of plasma etching, aiming at preventing poor spots from being produced in a contact area between the lower electrode and a substrate. The dry etching lower electrode comprises a flat panel-shaped electrode plate. An insulating layer is arranged on the electrode plate. An uneven rough surface is arranged on the insulating layer. The dry etching lower electrode can be used as a lower electrode for the dry etching device in an advanced generation production line.

Description

technical field [0001] The invention relates to the technical field of plasma etching, in particular to a dry etching lower electrode and a dry etching device. Background technique [0002] Dry etching (DryEtching) is a thin film etching technology using plasma, which is widely used in semiconductor technology and thin film transistor liquid crystal display (TFT-LCD) manufacturing technology. During the manufacturing process of the TFT-LCD array substrate, the thin film on the surface of the substrate is usually removed by dry etching to form the desired circuit pattern. During the dry etching process, the high-frequency voltage partially ionizes the reactive gas into plasma, and an electric field is formed between the upper electrode and the lower electrode that cooperate with each other. Etching is performed. [0003] In the dry etching process of actual production, the substrate placed on the lower electrode has a high temperature, and it is necessary to pass helium gas...

AI Technical Summary

Problems solved by technology

[0004] In the process of applying the existing lower electrode, the inventors found that the support protrusions on the lower electrode can play the role of supporting and adsorbing the substrate, but it will lead to the occurrence of defective spots (Mura) on the lower surface of the substrate

like image 3 As shown, since the non-contact area 3B and the contact area 3A exist between the support protrusion and the lower surface of the substrate, in the process of cooling the substrate with helium, the cooling effect of the non-contact area is better, while the cooling effect of the contact area is less poor

Defective spots are prone to occur on the lower surface of the substrate in the contact area due to the poor cooling effect of the contact area

In addition, due to the large top area of ​​the support protrusions, during the etching process, the support protrusions are easy to accumulate reaction products between the contact areas with the lower surface of the substrate, which not only reduces the adsorption capacity of the support protrusions to the substrate , which further increases the occurrence of bad spots in the contact area, which in turn affects the subsequent process quality

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