Polycrystalline silicon manufacturing method improving uniformity of polycrystalline silicon layer

Abstract

The invention provides a polycrystalline silicon manufacturing method improving uniformity of a polycrystalline silicon layer. The method comprises the first step that an amorphous silicon layer (30) is formed on a substrate (10); the second step that the amorphous silicon layer (30) is divided into a plurality of areas, and the film thicknesses of all the areas of the amorphous silicon layer (30) are measured; the third step that the measured film thicknesses of all the areas are compared with a preset film thickness, and the area with the measured film thickness larger than the preset film thickness is defined as a large film thickness area (42), and is marked; the fourth step that etching liquid is sprayed on the amorphous silicon layer (30) of the large film thickness area (42) to wash the amorphous silicon layer (30) to etch part of the amorphous silicon layer (30) of the large film thickness area (42), meanwhile, pure water is sprayed on other areas for washing, and the film thicknesses of all the areas of the amorphous silicon layer (30') are further made to be unified; the fifth step that laser annealing treatment is carried out on the washed amorphous silicon layer (30') to enable the amorphous silicon layer (30') to be crystallized to form the polycrystalline silicon layer (60).

Description

technical field [0001] The invention relates to the field of display technology, in particular to a polysilicon manufacturing method for improving the uniformity of a polysilicon layer. Background technique [0002] In recent years, the display technology has developed rapidly, and the flat panel display is very different from the traditional video image display with its completely different display and manufacturing technology. The traditional video image display is mainly cathode ray tube CRT (Cathode ray tubes); the main difference between the flat panel display is the change in weight and volume (thickness), usually the thickness of the flat panel display does not exceed 10cm, of course there are other Different, such as display principles, manufacturing materials, processes, and various technologies in video image display drivers. [0003] Flat panel displays have the characteristics of complete planarization, lightness, thinness, and power saving, and are developing t...

AI Technical Summary

Problems solved by technology

Although the crystallization effect can be optimized by adjusting the laser parameters, the size and uniformity of polysilicon grains after annealing are not solely determined by the laser parameters, among which the chemical vapor deposition (Chemical Vapor Deposition, CVD) film thickness and hydrogen fluoride (HF) The cleaning condition will also affect the final laser annealing process effect

[0005] see figure 1 , which is a schematic flow chart of performing laser annealing treatment on an amorphous silicon layer in the prior art. The amorphous silicon layer 100 with poor uniformity (the film thickness in some regions 102 is thicker) is only sprayed with hydrogen fluoride 200 for cleaning, After cleaning, the polysilicon layer 300 obtained by laser treatment still has uniformity problems

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