A junction terminal structure of a super junction device and its manufacturing method
A technology for superjunction devices and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as excess number of acceptor ions, severe potential distribution, high breakdown voltage, etc., and achieve improved breakdown Effects of Voltage Characteristics, Overall Device Area Reduction, Short Junction Termination Length
Active Publication Date: 2016-03-23
XIAN LONTEN RENEWABLE ENERGY TECH +1
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Problems solved by technology
[0005] The withstand voltage design of the junction terminal region is a difficult point in the design of super-junction power devices. Since the layout design of power devices is usually rectangular, there are usually four chamfers in the layout. If the potential distribution of the junction terminal structure is uneven, it may cause the The potential concentration phenomenon of the junction terminal at the corner part occurs, so that the electric field strength there exceeds the critical breakdown electric field of silicon, resulting in a significant decrease in the breakdown voltage of the device
The junction termination structure of a superjunction device usually adopts a plurality of P columns that are basically the same as the cell region, and the effective electric field component of the junction termination region gradually transitions from the longitudinal electric field in the silicon epitaxial layer body to the lateral electric field on the surface, so that the junction termination The number of acceptor ions near the surface appears to be excessive, so that the P-column cannot be completely depleted, and an approximately acute-angled triangle undepleted region is formed near the surface along the axis of the P-column, making the potential distribution in this region more intense, and by This situation is becoming more and more serious from the inside to the outside, so the traditional junction terminal structure of super junction devices cannot withstand high breakdown voltage well
The electric field distribution at the junction terminal can be optimized to a certain extent by changing the width and spacing of the P-columns of the super-junction device. However, the width of the P-columns will be limited by the reliability requirements of the manufacturing process in the deep trench etching and epitaxial filling processes.
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[0033] The junction terminal structure of the super junction structure with multiple epitaxy and multiple implantation processes is used for illustration, but the present invention is not limited to the junction terminal structure of super junction devices with multiple epitaxy and multiple implantation processes.
[0034] Step 1: Substrate material preparation, using crystal direction resistivity of 0.001Ω·cm N with a thickness of 10 μm + Silicon substrate single crystal substrate;
[0035] Step two: at N + A 5 μm N-type epitaxial layer is epitaxially grown on the surface of the substrate, and the typical doping concentration of the N-type epitaxial layer is 1×10 15 cm -3 , and then use the P-pillar mask mask, using 2MeV high-energy boron ion implantation dose of 1.5×10 12 cm -2 , using 600KeV implanted boron ion dose 1.5×10 12 cm -2 , forming a layer of alternating P-type and N-type epitaxial layer structures as shown in Figure 2(a);
[0036] Step 3: Deposit a silicon ...
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The invention provides a junction terminal structure of a super junction device and a manufacturing method of the super junction device. A plurality of P columns which are the basically same with a cellular area are usually adopted in the junction terminal structure of the super junction device, effective electric field components in the junction terminal area are gradually transited to a surface transverse electric field from a longitudinal electric field in a silicon epitaxial layer body, and therefore a traditional junction terminal structure of the traditional super junction device can not well bear the higher breakdown voltage. The plurality of P columns which are arranged at intervals are arranged in the junction terminal area of the super junction device, and each P column is separated to a plurality of P column areas by arranging discontinuous silica isolation areas. The junction terminal structure of the super junction device can well achieve potential distribution, reduce the area of a junction terminal of the super junction device, and therefore reduce the manufacturing cost of the super junction device.
Description
technical field [0001] The invention belongs to the field of semiconductor devices and process manufacturing, and in particular relates to a junction terminal structure of a super junction device and a manufacturing method thereof. Background technique [0002] Super-junction VDMOS devices are a new type of power semiconductor devices that develop rapidly and are widely used. It introduces a superjunction (Superjunction) structure on the basis of ordinary vertical double-diffused metal oxide semiconductor (VDMOS), so that it has VDMOS high input impedance, fast switching speed, high operating frequency, voltage control, good thermal stability, and drive The circuit is simple, and overcomes the shortcoming that the on-resistance of VDMOS and the breakdown voltage increase sharply in the relationship of 2.5 powers. due to its R DS(on) with BV 1.3 proportional, while common devices with R DS(on) Yes with BV 2.5 proportional to its R DS(on) It is much lower than ordinary M...
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IPC IPC(8): H01L29/40H01L29/06H01L29/78H01L21/336
Inventor 姜贯军陈桥梁陈仕全马治军张园园杜忠鹏
Owner XIAN LONTEN RENEWABLE ENERGY TECH