Fin part and finned-type field-effect transistor and forming method thereof

Abstract

The invention discloses a fin part and a finned-type field-effect transistor and a forming method of the fin part and the finned-type field-effect transistor. The forming method of the fin part includes the steps that a substrate is provided; mask layers provided with multiple first openings are formed on the surface of the substrate, and the first openings are exposed out of the substrate; the substrate is etched with the mask layers provided with the first openings as a mask, so that multiple grooves are formed; insulation layers are filled into the grooves; the mask layers are etched back along the first openings, the width of the first openings is increased, and multiple second openings are formed in the mask layers; insulation layers are etched along the second openings with the mask layers as a mask so that the insulation layers can remain with a preset certain thickness, and the substrate among the remaining insulation layers with the preset thickness serves as first auxiliary fin parts; the substrate above the first auxiliary fin parts is etched to form second auxiliary fin parts located on the first auxiliary fin parts and third auxiliary fin parts located on the second auxiliary fin parts. According to the fin part and the finned-type field-effect transistor and the forming method of the fin part and the finned-type field-effect transistor, stability of the finned-type field-effect transistor is improved.

Description

Technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a fin, a fin field effect tube, and a method for forming the fin and fin field effect tube. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are moving towards higher component density and higher integration. As the most basic semiconductor device, transistors are currently being widely used. Therefore, as the element density and integration of semiconductor devices increase, the gate size of transistors is becoming shorter and shorter. However, the shorter the gate size of the transistor will cause the transistor to produce a short channel effect, which in turn will generate leakage current, and ultimately affect the electrical performance of the semiconductor device. [0003] In order to overcome the short channel effect of the transistor and suppress the leakage current, the prior art propos...

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Problems solved by technology

[0006] In the fin field effect transistor formed in the prior art, the fin 11 is perpendicular to the surface of the substrate 10, which has no stress effect on the channel region, the charge diffusion speed in the channel region is relatively slow, and the performance of the fin field effect transistor is poor

Moreover, the uniformity of the topography of the sidewalls of the fins 11 formed in the prior art is relatively poor, and the difference in the topography of the sidewalls of the fins 11 will cause the threshold voltage of the fin field effect transistor to shift, affecting FinFET Stability

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