Resistive memory and preparation method thereof
A resistive and memory technology, applied in the direction of electric solid-state devices, circuits, electrical components, etc., can solve the problems of complicated preparation process of storage functional layer, affect cost and preparation efficiency, poor adhesion of lower electrode, etc., and achieve improvement of initial state Yield, ease of shape, effect of reduced contact area
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0042] figure 2 Shown is a schematic structural diagram of a resistive memory according to an embodiment of the present invention. like figure 2 As shown, the resistive memory 20 mainly includes a lower electrode 25 , a storage function layer 23 and an upper electrode 24 . Wherein, the lower electrode 25 is patterned and formed in the dielectric layer 22. Specifically, the first part of the dielectric layer 22a can be formed on the substrate 21 first, and then a hole is patterned in the dielectric layer 22a, and a metal layer is conformally covered in the hole for Form the lower electrode 25, and then fill the second part of the dielectric layer 22b on the metal layer to fill the hole, and planarize the second part of the dielectric layer 22b and the metal layer, thereby forming a "bowl-shaped structure" in the dielectric layer 22 "The lower electrode 25. The substrate 21 can be a semiconductor substrate, or a metal substrate for forming word lines or bit lines, etc.; the...
Embodiment 2
[0047] image 3 shown as figure 2 A top view of an example of a resistive memory in, Figure 4 shown as figure 2 A top view of yet another example of a resistive memory in . exist image 3 In the example shown, the storage function layer 23 is in the shape of a ring, which is formed on the lower electrode 25 in a circular bowl-shaped structure, and basically corresponds to the shape of the bowl rim of the lower electrode 25 . exist Figure 4 In the illustrated embodiment, the storage function layer 23 is square and ring-shaped, which is formed on the bottom electrode 25 of the square bowl-shaped structure, and basically corresponds to the shape of the bowl rim of the bottom electrode 25 . compared to figure 1 The memory functional layer 4 of the shown resistive memory, the annular memory functional layer 23 also has the advantage that the electrode effective contact area is small, therefore, the initial state yield rate can be improved, and the low resistance state and...
Embodiment 3
[0050] Figure 5 Shown is a schematic structural diagram of a resistive memory according to another embodiment of the present invention. like Figure 5 As shown, the resistive memory 30 mainly includes a lower electrode 35, storage function layers 33a, 33b and upper electrodes 34a, 34b. Among them, the lower electrode 35 is set as a bowl-shaped structure embedded in the dielectric layer 32 (composed of dielectric layers 32a and 32b), and the lower electrode of the bowl-shaped structure includes a part of the electrode along the bowl at its top, and the storage function layer passes through the bowl. Self-aligned oxidation is formed along part of the electrodes.
[0051] Image 6 shown as Figure 5 A top view of an example of a resistive memory in . like Image 6 As shown, two upper electrodes 34a and 34b are formed by patterning on the storage function layer, and correspondingly, the upper electrodes 34a and 34b cover 33a and 33b of the storage function layer; therefore,...
PUM
| Property | Measurement | Unit |
|---|---|---|
| Thickness | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More