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Magnetic nano-multilayer film for magneto-dependent sensor and preparing method thereof

A magnetic sensor and magnetic nanotechnology, applied in the field of magnetic sensor, can solve the problems of the influence of the sensitivity of the magnetic sensor, and achieve the effects of improved sensitivity, low manufacturing cost, and simple processing technology

Active Publication Date: 2014-02-12
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the manufacturing process can be simplified, the manufacturing cost can be reduced, and it is beneficial to the miniaturization of the device unit, but the interference of stray magnetic fields cannot be avoided, which affects the sensitivity of the magnetic sensor to a certain extent.

Method used

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  • Magnetic nano-multilayer film for magneto-dependent sensor and preparing method thereof
  • Magnetic nano-multilayer film for magneto-dependent sensor and preparing method thereof
  • Magnetic nano-multilayer film for magneto-dependent sensor and preparing method thereof

Examples

Experimental program
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preparation example Construction

[0082] see Image 6 , Image 6 It is a flow chart of the preparation method of the magnetic nano multilayer film of the present invention. The preparation method of the magnetic nano multilayer film for magnetic sensor of the present invention is used to prepare the magnetic nano multilayer film of the above-mentioned semi-open or closed ring structure, comprising the following steps:

[0083] Step S1, depositing and forming a magnetic nano-multilayer film comprising a substrate 1, a seed layer 2, a reference magnetic layer 3, an intermediate layer 4, a detection magnetic layer 5 and a cover layer 6 sequentially stacked from bottom to top;

[0084] Step S2, processing the bottom electrode 7 on the magnetic nano-multilayer film by photolithography;

[0085] Step S3, processing the required half-open or closed ring-shaped magnetic nano-multilayer film 9 on the bottom electrode 7;

[0086] Step S4, processing the top electrode 8 of the magnetic nano-multilayer film 9 by deposi...

Embodiment 1

[0108] A ring-shaped magnetic nano-multilayer film prepared by magnetron sputtering, with a structure of Si-SiO2 / Ta(5) / Ru(5) / Ta(5) / IrMn(15) / CoFe(2.5) / Ru(0.9) / CoFeB(3) / MgO(1) / CoFeB(10) / Ta(5) / Ru(5) (unit: nm). During deposition, a plane-induced magnetic field of 1000Oe is added, so the magnetization direction of the first magnetic layer is fixed by the antiferromagnetic pinning layer, and the magnetization direction of the second magnetic layer is free.

[0109] (1) Select a Si-SiO with a thickness of 1mm 2 The substrate is used as the substrate, and the seed layer 2 is deposited by magnetron sputtering, Ta(5nm) / Ru(5nm) / Ta(5nm), the deposition rate is 0.1nm / s, and the Ar gas sputtering pressure is 0.07 during deposition. Pa, the vacuum degree is better than 2×10 -6 Pa.

[0110] (2) Deposit 15nm thick IrMn as the antiferromagnetic pinning layer AFM by magnetron sputtering, the deposition rate is 0.1nm / s, the Ar gas sputtering pressure is 0.07Pa during deposition, and the vac...

Embodiment 2～6

[0121] Examples 2 to 6, except for those already marked, the remaining thickness units in the list are nanometers

[0122] Table 1

[0123]

[0124]

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Abstract

The invention discloses a magnetic nano-multilayer film for a magneto-dependent sensor and a preparing method thereof. The magnetic nano-multilayer film comprises a substrate, a seed layer, a reference magnetic layer, an interlayer, a detecting magnetic layer and a covering layer, wherein the substrate, the seed layer, the reference magnetic layer, the interlayer, the detecting magnetic layer and the covering layer are arranged in a superimposed mode in sequence from bottom to top, the reference magnetic layer is used for converting information of magnetic torque rotation of the detecting magnetic layer into an electric signal, and the detecting magnetic layer is used for sensing a magnetic field to be detected. Due to the fact that the magnetic nano-multilayer film is of a half-open or closed annular structure, a closed magnetic circuit is formed on the magnetic nano-multilayer film in the length direction of the annular structure, the width of the annular structure is far smaller than the side length of the annular structure, and the magnetic torque of the detecting magnetic layer is made in the side direction of the annular structure due to the shape anisotropy of the annular structure and the closed magnetic circuit. The invention further discloses the preparing method of the magnetic nano-multilayer film.

Description

technical field [0001] The invention relates to the field of magnetic sensitive sensors, in particular to a magnetic nano-multilayer film for magnetic sensitive sensors based on different geometric shapes and a preparation method thereof. Background technique [0002] Magnetic sensors have broad and important application prospects in various fields such as data storage, mechanical positioning, speed detection, and non-destructive detection. Early magneto-sensitive sensors were mainly prepared based on semiconductor materials with Hall effect and magnetic materials with magnetic anisotropy magnetoresistance (AMR) effect. However, the magnetic field sensitivity of these two types of materials is low. With the development of spintronics, magnetic sensors based on giant magnetoresistance effect and tunneling magnetoresistance effect have been widely studied and applied. The main reason is that the magnetic field sensitivity of these two types of magnetosensitive sensors is high...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/12H01F10/32H10N50/10H10N50/01
Inventor 吴昊丰家峰陈军养韩秀峰
Owner INST OF PHYSICS - CHINESE ACAD OF SCI