Wiring substrate with embedded semiconductor and built-in positioning parts and its manufacturing method
A positioning member, semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the setting position misalignment, no control or adjustment of the chip attaching program, chip horizontal and vertical displacement, etc.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0059] figure 1 as well as figure 2 It is a cross-sectional view of a manufacturing method for forming a spacer on a dielectric layer according to a preferred implementation aspect of the present invention, and Figure 2A for figure 2 top view.
[0060] figure 1 It is a cross-sectional view of a laminated substrate, which includes a metal layer 11 , a dielectric layer 21 , and a support plate 23 . The metal layer 11 is a copper layer with a thickness of 35 μm, however, the metal layer 11 can also be various metal materials, and is not limited to the copper layer. In addition, the metal layer 11 can be deposited on the dielectric layer 21 by various techniques, including lamination, electroplating, electroless plating, evaporation, sputtering, and combinations thereof to deposit a single-layer or multi-layer structure, and its The thickness is preferably in the range of 10 to 200 microns.
[0061] The dielectric layer 21 is generally made of epoxy resin, glass epoxy res...
Embodiment 2
[0082] Figure 10 and 10AAccording to another implementation aspect of the present invention, there are configuration guides 115 close to the peripheral edge of the strengthening layer 41, the second conductive blind hole 243 directly contacting the inactive surface 313 of the semiconductor element 31, and the structure of the strengthening layer 41. A cross-sectional view and a top view of another wiring substrate 102 . In this embodiment, the wiring substrate 102 is prepared by a similar manufacturing method as in Embodiment 1, except that the configuration guide 115 is formed simultaneously with the positioning member 113 by removing selected parts of the metal layer 11 In order to accurately define the placement position of the reinforcement layer 41 , the second conductive blind hole 243 directly contacting the inactive surface 313 of the semiconductor device 31 and the reinforcement layer 41 is formed. Here, the first build-up circuit 201 includes a first insulating la...
Embodiment 3
[0085] Figure 11-16 According to yet another embodiment of the present invention, a cross-sectional view of a manufacturing method of a wiring substrate having a positioning member surrounding a non-active surface of a semiconductor. For the purpose of brevity, any statement in Example 1 may be incorporated into the same application section here, and the same statement will not be repeated.
[0086] Figure 11 for the reason Figure 1-4 The same steps are shown, except that the semiconductor element 31 is disposed on the dielectric layer 21 with its inactive side 313 facing the dielectric layer 21 to form a cross-sectional view of the structure.
[0087] Figure 12 It is a cross-sectional view of the structure of the first insulating layer 211 formed on the active surface 311 of the semiconductor device 31 and the strengthening layer 41 in the upward direction. The first insulating layer 211 covers the semiconductor device 31 , the reinforcement layer 41 , and the positio...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More 