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Laser temperature compensation device in tunable semiconductor laser absorption spectrum

A technology of laser absorption spectrum and temperature compensation device, which is applied in the field of absorption spectrum measurement, can solve the problems of not considering the influence of circuit board, absorbance calculation and concentration inversion, etc., and achieves small volume and power consumption, high integration and high precision Effect

Active Publication Date: 2016-11-30
ANHUI INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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  • Abstract
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  • Application Information

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Problems solved by technology

However, in the process of long-term continuous operation, especially when the range of ambient temperature changes is relatively large, the current commercial laser temperature control system does not consider the impact of ambient temperature changes on the circuit board. The wavelength of the laser will change with the ambient temperature, which affects the absorbance. Calculation and Concentration Retrieval Effects

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  • Laser temperature compensation device in tunable semiconductor laser absorption spectrum
  • Laser temperature compensation device in tunable semiconductor laser absorption spectrum

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Embodiment Construction

[0015] Such as figure 1 , 2 As shown, a laser temperature compensation device in a tunable semiconductor laser absorption spectrum includes an ARM chip 1, connected to the ARM chip 1 is a temperature acquisition and filtering module 7, a host computer 9 and a power conversion module 5, the ARM Chip 1 is connected to DFB laser 3 sequentially through DAC chip and filter module 6 and laser temperature control driver 2, ARM chip 1 is connected to DFB laser 3 through laser modulation module 8 and laser current driver 4 in sequence, and DFB laser 3, laser temperature control Drive 2, laser current drive 4, temperature acquisition and filter module 7, laser modulation module 8, ARM chip 1, DAC chip and filter module 6 are integrated on the same PCB circuit board and placed in a high and low temperature test box to regulate high and low temperature experiments The temperature of the box makes the temperature change uniformly between 0 degrees and 60 degrees. The laser temperature con...

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Abstract

The invention discloses a laser temperature compensation device in the tunable semiconductor laser absorption spectrum, which includes an ARM chip connected with a temperature acquisition and filtering module and a power conversion module, and the ARM chip passes through a DAC chip and a filtering module in sequence The module and the laser temperature control driver are connected to the DFB laser, and the ARM chip is connected to the DFB laser through the laser modulation module and the laser current driver in turn. The invention adopts low-temperature drift components, which reduces the influence of component temperature drift on the wavelength of the laser. The whole device has a high degree of integration, relatively small volume and power consumption, and is conducive to system integration and miniaturization. The device responds quickly and has high precision. It can correct and compensate the change of laser wavelength within 1s.

Description

technical field [0001] The invention relates to the technical field of absorption spectrum measurement, in particular to a laser temperature compensation device in tunable semiconductor laser absorption spectrum. Background technique [0002] Tunable Semiconductor Laser Absorption Spectroscopy (TDLAS), utilizes the wavelength tunable and narrow linewidth characteristics of semiconductor lasers, and obtains gas characteristic absorption spectra through current-controlled wavelength scanning, which has the advantages of non-invasive, fast response and on-site real-time measurement. Environmental monitoring, energy saving and emission reduction, fire early warning, ecological environment monitoring, industrial process detection and control, engine detection and other aspects have good application prospects. [0003] However, there is a problem of wavelength drift in continuous operation of tunable semiconductor lasers, and there are many reasons for the wavelength drift of lase...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/068H01S5/0687
Inventor 阚瑞峰袁松何亚柏许振宇阮俊姚路陈久瑛
Owner ANHUI INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI