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Wire bondable surface for microelectronic devices

A technique for bonding surfaces, bonding layers, applied in the field of metal and metal alloy layer sequences

Inactive Publication Date: 2014-02-19
ATOTECH DEUT GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, however, the mechanical protection of the sensitive area under the contact area during wire bonding is no longer sufficient and device breakage caused by wire bonding is observed

Method used

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  • Wire bondable surface for microelectronic devices
  • Wire bondable surface for microelectronic devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] Embodiment 1 (comparison)

[0057] A nickel-phosphorus alloy is deposited by electroless plating onto the contact pads made of copper. The thickness of the nickel-phosphorus alloy after deposition was 1.0 μm and the phosphorus concentration was 12% by weight.

[0058] The substrate was then annealed at 500°C for 8 hours.

[0059] The diffusion behavior of copper into the nickel phosphorus alloy (and vice versa) was determined using XPS measurements in conjunction with exfoliation of the layer.

[0060] A copper content of 3-5 atomic % was observed in the nickel phosphorous alloy layer after the annealing step.

[0061] Therefore, the thin nickel-phosphorous alloy layer did not prevent copper diffusion at high temperature.

Embodiment 2

[0063] Co-W-P alloys were deposited onto contact pads made of copper by electroplating. The thickness of the Co—W—P alloy after deposition was 0.2 μm and the phosphorus concentration was 3% by weight.

[0064] Thermal annealing and XPS measurements were performed as described in Example 1.

[0065] Negligible amounts of copper were detected in the Co-W-P alloy layer after thermal annealing.

[0066] Therefore, the thin Co-W-P alloy layer does prevent copper diffusion at high temperature.

Embodiment 3

[0068] Co-W-P alloys were deposited onto contact pads made of copper by electroplating. The thickness of the Co—W—P alloy after deposition was 0.2 μm and the phosphorus concentration was 3% by weight.

[0069] Next, an intermediate layer of pure palladium (thickness: 0.3 μm) and thereafter a top layer of gold (thickness: 0.03 μm) was deposited onto the palladium layer.

[0070] The wire bonding properties of the final metal and metal alloy layer sequence consisting of copper contact pads, Co—W—P alloy layer, palladium layer with a palladium content of more than 99% by weight and a gold layer were determined using standard no. DVS2811.

[0071] A Delvotec model 5410 TS bonder was used with gold wire Au-AH3 (Hereaus) and binding parameters US power 75% (tick marks (no calibration scale), given parameters specific to TS bonder); 25 gf binding force and 25 ms binding time. Measurements were made for 30 stud bump / pad dimensions.

[0072] The following parameters were determined d...

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PUM

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Abstract

The present invention concerns thin diffusion barriers in metal and metal alloy layer sequences of contact area / barrier layer / first bonding layer type for metal wire bonding applications. The diffusion barrier is selected from Co-M-P. Co-M-B and Co-M-B-P alloys wherein M is selected from Mn, Zr, Re, Mo, Ta and W having a thickness in the range 0.03 to 0.3 µm. The first bonding layer is selected from palladium and palladium alloys.

Description

field of invention [0001] The present invention relates to metal and metal alloy layer sequences on semiconducting substrates for wire bonding applications. Background of the invention [0002] Microelectronic devices fabricated from semiconducting substrates, such as silicon wafers, include contact areas on outer surfaces for providing electrical contact between the microelectronic device and an IC substrate or printed circuit board. These contact regions, which may be in the form of contact pads or raised structures, generally consist of copper, copper alloys, aluminum or aluminum alloys. To provide this electrical contact, soldering and wire bonding are applied. [0003] In both cases, the contact area must be made to provide solderability and bondability by depositing a metal or metal alloy layer over the contact area which provides the barrier layer and the first and / or second Two can combine the function of the surface. [0004] The barrier layer prevents diffusion ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/485
CPCH01L2224/05164H01L2924/0105H01L2924/01082H01L2924/01025H01L2924/01019H01L2924/01029H01L2924/014H01L2924/01013H01L2924/01024H01L2924/0103H01L2224/05644H01L2224/05124H01L2924/01079H01L24/05H01L2924/01061H01L24/03H01L2924/0104H01L2924/01005H01L2924/01033H01L2924/01006H01L2224/05157H01L2924/01074H01L2924/01042H01L2924/01073H01L2924/01075H01L2224/05147H01L2224/05664H01L2924/01051H01L2224/45144H01L2224/45147H01L2924/10253H01L2924/00014H01L2924/01015H01L23/485H01L23/4827
Inventor A.乌利希J.盖达C.祖亨特伦克
Owner ATOTECH DEUT GMBH
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