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35results about How to "Sufficient mechanical stability" patented technology

Static and dynamic three-dimensional microcrack propagation sensor preparation method, sensor and equipment

The invention belongs to the technical field of sensors, and provides a static and dynamic three-dimensional microcrack propagation sensor preparation method, a sensor and equipment. The preparation method comprises the following steps: preparing a piezoresistive/piezoelectric sensing functional material dispersion material, and attaching the piezoresistive/piezoelectric sensing functional material dispersion material to the surface of a fiber cloth matrix to obtain piezoresistive/piezoelectric sensing fiber cloth; performing pre-stretching treatment on the piezoresistive/piezoelectric sensing fiber cloth to obtain piezoresistive/piezoelectric sensing three-dimensional microcrack fiber cloth; carrying out microwave ablation on the piezoresistive/piezoelectric sensing three-dimensional microcrack fiber cloth, and removing a fiber cloth matrix to obtain a piezoresistive/piezoelectric sensing three-dimensional microcrack functional skeleton; the two faces of the piezoresistive/piezoelectric sensing three-dimensional microcrack functional framework are coated with conducting layers correspondingly, and then electrodes are formed; carrying out polarization treatment on the piezoresistive/piezoelectric sensing three-dimensional microcrack functional skeleton with the electrode formed on the surface; and packaging the piezoresistive/piezoelectric sensing three-dimensional microcrack functional framework to obtain the static and dynamic three-dimensional microcrack propagation sensor.
Owner:QINGDAO TECHNOLOGICAL UNIVERSITY

Method for preparing semiconductor gallium nitride (GaN) extending thin film substrate

The invention discloses a method for preparing a quasi-suspending semiconductor gallium nitride (GaN) extending thin film substrate supported by a single crystal sapphire, belonging to the technical field of gallium nitride substrates. The method comprises the steps: a GaN extending thin film on the sapphire substrate is irradiated from the sapphire substrate by an ultraviolet laser beam; the energy density of the laser beam is adjusted to lead the laser beam irradiated on the GaN extending thin film to form array figures with different energy density; and a GaN extending thin film part with high irradiation energy density and the sapphire substrate generate non-damage peeling, and a GaN extending thin film part with low irradiation energy density is still connected with the sapphire substrate to obtain the quasi-suspending semiconductor gallium nitride extending thin film substrate. A mechanical support of the GaN extending thin film substrate is still supplied by the single crystal sapphire, the GaN extending thin film substrate has enough mechanical stability to be used in the following process as the substrate, and the quasi-suspending GaN thin film substrate has less extendingstress and low defect density.
Owner:DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV
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