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74 results about "Microvia" patented technology

Microvias are used as the interconnects between layers in high density interconnect (HDI) substrates and printed circuit boards (PCBs) to accommodate the high input/output (I/O) density of advanced packages. Driven by portability and wireless communications, the electronics industry strives to produce affordable, light, and reliable products with increased functionality. At the electronic component level, this translates to components with increased I/Os with smaller footprint areas (e.g. flip-chip packages, chip-scale packages, and direct chip attachments), and on the printed circuit board and package substrate level, to the use of high density interconnects (HDIs) (e.g. finer lines and spaces, and smaller vias).

Electronic module with feed through conductor between wiring patterns

The electronic module comprises a dielectric 1031 substrate having a first surface and a second surface and an installation cavity extending through the dielectric substrate and having a perimetrical side wall. The electronic module further comprises a first wiring layer 1032 on the first surface, a second wiring layer 1033 on the second surface, and a feed through conductor 1034 on the perimetrical side wall and electrically connecting at least one conductor in the first wiring layer to at least one conductor in the second wiring layer. There is also at least one IC inside the installation cavity. The electronic module further comprises a first insulating layer 1035 on the second wiring layer, a second insulating layer 1036 on the first wiring layer, and a third wiring layer 1037 on the first insulating layer. First microvias 1038 inside the first insulating layer make electrical connections between the second wiring layer and the third wiring layer. Second microvias 1039 electrically connect the IC to at least one of the second wiring layer and the third wiring layer. The electronic module comprises also a fourth wiring layer 1040 on the second insulating layer and third microvias 1041 inside the second insulating layer and making electrical connections between the first wiring layer and the fourth wiring layer.
Owner:IMBERATEK LLC

A method for microvia filling by copper electroplating with TSV technology for 3D copper interconnection at high aspect ratio

A method for microvia filling by copper electroplating with a TSV technology for a 3D copper interconnection at a high aspect ratio, which includes: Step 1: formulating an electroplating solution of a copper methyl sulfonate system, Step 2: wetting the microvias of the TSV technology by means of an electroplating pre-treatment, Step 3: charging into the grooves, completing the ultra-low current diffusion, so that the copper ions and the additives are rationally distributed at the surface and the interior of the microvias of the TSV technology, Step 4: connecting the wafer for the TSV technology to the cathode of a power source, fully immersing the electroplating surface of the wafer in the electroplating solution, and electroplating with a step-by-step current method of rotating or stirring the cathode, the current density of the plating conditions is 0.01-10A/dm2 and the temperature is 15-30° C., Step 5: after the electroplating, washing the wafer completely clean with deionized water, and drying it by spinning or blowing. The method for microvia filling by copper electroplating with a TSV technology for a 3D copper interconnection at a high aspect ratio has a high via-filling speed, a thin copper layer on the surface, no risk of creating voids and cracks, and can achieve the complete filling of microvias having an aspect ratio of more than 10:1 which are extremely difficult to fill.
Owner:SHANGHAI SINYANG SEMICON MATERIALS
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