The invention discloses a microvia-superfilling copper plating technology. The microvia-superfilling copper plating technology comprises the following steps of a, carrying out activation treatment on a blind hole plate to be plated in a dilute sulphuric acid solution for 1-10min, carrying out water washing and drying, vertically fixing the blind hole plate to be plated to the middle of a Hull cell having the volume of 1500mL, and putting phosphor-containing copper plates as anodes having phosphor content of 0.04-0.065% at two ends of the cell, b, preparing a plating solution, c, switching on a power supply, carrying out electroplating at current density of 0.5-2ASD for 5-30min, increasing current density to 0.5-4ASD, carrying out electroplating for 10-20min, wherein the whole electroplating process is finished in a static state, then switching off the power supply, taking out the blind hole plate as a cathode, flushing the blind hole plate by distilled water, and blow-drying the blind hole plate by cold air to obtain a sample. Under the condition of absolutely no forced convection of the plating solution, the microvia-superfilling copper plating technology does not increase surface copper thickness and guarantees a high microvia-filling rate of the blind hole device.