Unlock instant, AI-driven research and patent intelligence for your innovation.

Substrate for solar cell and oxide semiconductor electrode for dye-sensitized solar cell

An oxide semiconductor, solar cell technology, applied in electrolytic capacitors, circuits, capacitors, etc., can solve the problems of conductive film wear, time and cost

Inactive Publication Date: 2014-02-26
NIPPON ELECTRIC GLASS CO LTD
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the conductive film is formed on one side of the glass substrate, it takes time and cost because only one side can be polished.
Furthermore, in the polishing process, there is a problem that abrasion is easily formed on the conductive film.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Substrate for solar cell and oxide semiconductor electrode for dye-sensitized solar cell
  • Substrate for solar cell and oxide semiconductor electrode for dye-sensitized solar cell
  • Substrate for solar cell and oxide semiconductor electrode for dye-sensitized solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0134] Hereinafter, the present invention will be described based on examples, but the present invention is not limited to these examples.

[0135] First, a first aspect of the present invention will be described based on an embodiment.

[0136] First, a glass substrate (100 mm×100 mm) having the composition, thickness, thermal expansion coefficient, and strain point described in Table 1 was prepared. In addition, the thermal expansion coefficient is a value measured using a dilatometer. In addition, the strain point is a value measured by DTA.

[0137] Then, an FTO film (film thickness: 1 μm) was formed as a conductive film on each glass substrate by thermal CVD at a film formation temperature of 510° C. using dimethyltin dichloride and trifluoroacetic acid.

[0138] After slowly cooling the obtained glass substrate with the conductive film, it was placed on a table, and the presence or absence of deformation was checked with a gap gauge. The state of the glass substrate h...

Embodiment 5～8 and comparative example 3、4）

[0147] On each of the glass substrates (120 mm×120 mm) described in Table 2, an FTO film as a conductive film was formed by thermal CVD. Specifically, using (CH 3 ) 2 SnCl 2 、CF 3 COOH was used as a raw material, and after they were vaporized once, they were sprayed onto a glass substrate heated to the film-forming temperature described in Table 2 to form a film to obtain a glass substrate having a conductive film. Film formation was performed after holding each glass substrate at the film formation temperature for 10 minutes. In addition, the film-forming time was adjusted in the range of 2 to 5 minutes so that the thickness of the FTO film was about 1 μm.

[0148] Each of the obtained glass substrates having a conductive film was slowly cooled, and the slow-cooled glass substrates with a conductive film were placed on a stage, and the presence or absence of deformation was checked with a gap gauge. The state of the glass substrate having the conductive film was evaluate...

Embodiment 9～13）

[0153] The glass substrates with the conductive film of Examples 5 and 6 were cut into a size of 15 mm×15 mm, and the titanium oxide paste was screen-printed on the conductive film using a 200-mesh screen. The Ti-Nanoxide T / SP (hereinafter referred to as T / SP, with an average particle size of 13nm) from Solaronix, which is translucent after firing and Ti-Nanoxide D / SP from the same company ( Hereinafter, it is called D / SP, and its average particle diameter is 13 nm (including some particles with an average particle diameter of 400 nm). Only to D / SP in embodiment 9 and 11, only to T / SP in embodiment 10 and 12, and in embodiment 13, carry out screen printing according to the order of T / SP, D / SP, use electric furnace in Baking at 500°C for 30 minutes.

[0154] Next, the transparent repair tape 810 was attached to the baked titanium oxide layer, and immediately peeled off after applying pressure with a rubber roller, thereby confirming the adhesiveness between the glass substrate...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
strain pointaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

Provided is a solar cell substrate which is composed of a transparent conductive film formed on a glass substrate, wherein the thermal expansion coefficient of the glass substrate is 50x10-7 to 110x10-7 / DEG C. Also provided is a solar cell substrate in which a conductive film composed of a fluorine-doped tin oxide or an antimony-doped tin oxide is deposited on a glass substrate having a thickness of 0.05 to 2 mm, wherein the strain point of the glass substrate is 525 DEG C or higher.

Description

[0001] This application is titled "Substrate for Solar Cells and Oxide Semiconductor Electrodes for Dye-Sensitized Solar Cells", the international filing date is August 12, 2009, and the international application number is PCT / JP2009 / 064265, A divisional application with national application number 200980122754.1. technical field [0002] The present invention relates to a substrate for a solar cell and an oxide semiconductor electrode for a dye-sensitized solar cell using the substrate for a solar cell. Background technique [0003] In recent years, demand for solar cells headed by monocrystalline silicon, polycrystalline silicon solar cells, or amorphous silicon solar cells has been increasing. These solar cells are mainly used for household power generation, commercial power generation, and the like. In addition, as other solar cells, CIS solar cells, CdTe solar cells, dye-sensitized solar cells, organic thin-film solar cells, etc. have been developed, and these are also...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C03C3/091C03C17/23
CPCH01G9/2095H01G9/2059Y02E10/542H01G9/2031
Inventor 泽田正弘永金知浩坂本明彦濑户直藤本智史
Owner NIPPON ELECTRIC GLASS CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com