Preparation method of non-sensitive area protection film for sensor
A non-sensitive area and protective film technology, applied in the semiconductor field, can solve problems such as short circuit and FET device leakage
Active Publication Date: 2014-03-12
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Problems solved by technology
[0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for preparing a protective film in the non-sensitive area of the sensor, which is used to solve the problems of FET device leakage, Problems with faults such as short circuits
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[0041] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
[0042] Please see attached picture. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...
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Abstract
The invention discloses a preparation method of a non-sensitive area protection film for a sensor. The preparation method comprises the following steps: providing a silicon wafer provided with a silicon nanowire; sequentially growing a first Si3N4 film with first thickness, a SiO2 film and a second Si3N4 film with second thickness on the silicon wafer, wherein the second thickness is greater than the first thickness; carrying out a photolithographic process for imaging the second Si3N4 film to form a window, and etching an exposed Si3N4 film area above the silicon nanowire along the window until the SiO2 film below the second Si3N4 film area is exposed; continuing the etching; removing photoresist covered by the rest of the second Si3N4 film area; then placing into strong phosphoric acid to corrode the first Si3N4 film above the silicon nanowire so as to expose the silicon nanowire. The preparation method ensures that the sensor can be used for detection in a liquid environment; the silicon nanowire cannot be damaged, and in the modification of a subsequent sensitive membrane, a biological group also can be selectively adsorbed in a sensitive area.
Description
technical field [0001] The invention relates to a method for preparing a protective film for a non-sensitive area of a silicon nanowire biosensor, and belongs to the technical field of semiconductors. Background technique [0002] Nanomaterials have broad application prospects in sensors due to their small size, large number of surfaces / interfaces, and extreme sensitivity to environmental changes. Due to the stable and repeatable electrical characteristics of silicon nanowires, its conductivity can be easily modulated, and its surface can be easily biomodified, so silicon nanowire sensors have become an important representative of the new generation of biosensors. [0003] Utilizing the anisotropic etching principle of silicon, combined with MEMS manufacturing technology, and adopting a top-down processing method, high-purity, high-uniformity, and high-precision silicon nanowires are manufactured at low cost, in large quantities, and with precise positioning. On this basi...
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IPC IPC(8): B81C1/00G01N27/414
Inventor 戴鹏飞李铁高安然鲁娜王跃林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI