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Method for large-scale assembling and manufacturing of ZnO-base nanometer device by adopting floating potential dielectrophoresis

A floating potential and nano-device technology, which is applied in nanotechnology, nanotechnology, nanostructure manufacturing, etc., can solve the problems of small device size, high electrode array density, inability to achieve large-scale assembly and manufacturing technology, and low-cost manufacturing. Highly operable and reproducible results

Inactive Publication Date: 2014-03-12
SHENYANG JIANZHU UNIVERSITY
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0003] At present, the manufacturing technology of ZnO-based nano-devices is basically still in the laboratory stage, and the existing assembly and manufacturing technology cannot achieve large-scale and low-cost manufacturing. This technical status is still a challenging problem that restricts the research and application of nano-devices.
The conventional assembly method is to directly apply an external electric field to the source and drain electrodes of the microelectrode structure, but in large-scale assembly manufacturing, due to the small size of the device and the high density of the electrode array, it is difficult to separate the numerous electrode leads due to the limitation of the manufacturing process. Realizing batch and large-scale manufacturing is the development trend of nano-devices

Method used

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  • Method for large-scale assembling and manufacturing of ZnO-base nanometer device by adopting floating potential dielectrophoresis
  • Method for large-scale assembling and manufacturing of ZnO-base nanometer device by adopting floating potential dielectrophoresis
  • Method for large-scale assembling and manufacturing of ZnO-base nanometer device by adopting floating potential dielectrophoresis

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Embodiment 1

[0033] The method for large-scale assembly of ZnO-based nano-devices using floating potential dielectrophoresis is carried out according to the following steps:

[0034] (1) Prepare a dispersed mixed solution: mix ZnO nanowires with alcohol with a purity of more than 99.9%, and the mass ratio of alcohol to ZnO nanowires is 1100:1;

[0035] (2) Ultrasonic assisted dispersion: Put the mixed solution of ZnO nanowires and alcohol into a test tube, put it into an ultrasonic oscillator at 45°C for 10 minutes, and then take it out and stand still for 1 hour to obtain a uniform translucent solution;

[0036](3) Floating potential dielectrophoresis assembly of ZnO nanowires: apply the alternating voltage signal required by the electric field to the source and back gate of the floating potential microelectrode chip through the probe, and use a micropipette to take 1 μL after dispersion The above-mentioned zinc oxide nanowire sample solution is titrated to a floating potential microelect...

Embodiment 2

[0041] The method for large-scale assembly of ZnO-based nano-devices using floating potential dielectrophoresis is carried out according to the following steps:

[0042] (1) Prepare a dispersed mixed solution: mix ZnO nanowires with alcohol with a purity of more than 99.9%, and the mass ratio of alcohol to ZnO nanowires is 1000:1;

[0043] (2) Ultrasonic assisted dispersion: Put the mixed solution of ZnO nanowires and alcohol into a test tube, put it into an ultrasonic oscillator at 30°C for 15 minutes, and then take it out and stand still for 1 hour to obtain a uniform translucent solution;

[0044] (3) Floating potential dielectrophoresis assembly of ZnO nanowires: apply the alternating voltage signal required by the electric field to the source and back gate of the floating potential microelectrode chip through the probe, and use a micropipette to take 2 μL after dispersion The above-mentioned zinc oxide nanowire sample solution is titrated to a floating potential microelec...

Embodiment 3

[0048] The method for large-scale assembly of ZnO-based nano-devices using floating potential dielectrophoresis is carried out according to the following steps:

[0049] (1) Prepare a dispersed mixed solution: mix ZnO nanowires with alcohol with a purity of more than 99.9%, and the mass ratio of alcohol to ZnO nanowires is 1030:1;

[0050] (2) Ultrasonic assisted dispersion: Put the mixed solution of ZnO nanowires and alcohol into a test tube, put it into an ultrasonic oscillator at 40°C for 12 minutes, and then take it out and stand still for 1 hour to obtain a uniform translucent solution;

[0051] (3) Floating potential dielectrophoresis assembly of ZnO nanowires: apply the alternating voltage signal required by the electric field to the source and back gate of the floating potential microelectrode chip through the probe, and use a micropipette to take 1.5 μL to disperse After the above-mentioned zinc oxide nanowire sample solution is titrated to the floating potential micr...

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Abstract

The invention belongs to the field of nanometer operation, and discloses a method for large-scale assembling and manufacturing of a ZnO-base nanometer device by adopting floating potential dielectrophoresis. The method includes the first step of preparing dispersive mixing solution, the second step of carrying out ultrasonic-assisted dispersion, the third step of adopting floating potential dielectrophoresis to assemble ZnO nanowires, specifically speaking, applying alternating voltage signals needed by an electric field on a source electrode and a back grid electrode of a floating potential microelectrode chip respectively through probes, taking 1-2mL of dispersed ZnO nanowire sample solution through a micropipettor and titrating the solution to a floating potential microelectrode and applying sine AC signals to the microelectrode, wherein the frequency is 1-2MHz, the peak-to-peak value voltage is 8-10 Vp-p, and the floating potential dielectrophoresis duration is 3-8s, and the fourth step of carrying out aftertreatment, specifically speaking, enabling the electrode chip subjected to the floating potential dielectrophoresis to be rinsed in deionized water and to be heated for 30mins at 105 DEG C in a vacuum drying box, and finally obtaining the ZnO-base nanometer device through annealing. According to the method for large-scale assembling and manufacturing of the ZnO-base nanometer device by the adopting floating potential dielectrophoresis, the floating potential dielectrophoresis technology is adopted, and the problems that the ZnO-base nanometer device is low in effective assembling efficiency and can not be assembled in a large scale are solved.

Description

technical field [0001] The invention relates to the field of nanometer operation, in particular to a method for large-scale assembly and manufacture of ZnO-based nanometer devices by adopting floating potential dielectrophoresis. Background technique [0002] Zinc oxide (Znic Oxide, abbreviated as ZnO) nanowire has many excellent properties such as semiconductor, photoelectricity, piezoelectricity, gas sensitivity, transparent conductivity and harmlessness to the human body. It is an important wide-bandgap semiconductor functional material. In recent years, with the breakthrough of high-quality ZnO crystal growth technology, research on ZnO materials, devices and applications has become a new hot spot. As a concentrated expression of multidisciplinary integration, ZnO Kina electronic devices not only have important scientific research value, but also have potential application prospects in the fields of disease diagnosis, environmental monitoring, pharmaceutical food monitor...

Claims

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Application Information

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IPC IPC(8): B82B3/00B82Y40/00
Inventor 许可刘剑侯静
Owner SHENYANG JIANZHU UNIVERSITY
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