Three-dimensional memory (3D-M) with reading/writing voltage generator chip

Abstract

The invention provides a 3D-M with a reading / writing voltage generator chip. The 3D-M comprises at least one independent 3D array chip (30) and one independent reading / writing voltage generator chip (40), wherein the 3D array chip (30) contains multiple 3D storage arrays (22aa...), and the reading / writing voltage generator chip (40) provides at least one reading / writing voltage (VR / VW) different from a power supply voltage (VDD) for the 3D array chip (30). The 3D-M can support multiple 3D array chips (30a, 30b...).

Description

technical field [0001] The present invention relates to the field of integrated circuit memories, more precisely three-dimensional memories (3D-M). Background technique [0002] Three-dimensional memory (3D-M) is a monolithic semiconductor memory that consists of multiple memory layers stacked on top of each other. 3D-M includes three-dimensional read-only memory (3D-ROM) and three-dimensional random access memory (3D-RAM). 3D-ROM can be further divided into three-dimensional mask programmed read-only memory (3D-MPROM) and three-dimensional electrically programmed read-only memory (3D-EPROM). Based on its programming mechanism, 3D-M can contain memristor, resistive random-access memory (RRAM or ReRAM), phase-change memory (PCM), programmable metallization memory (PMM), or conductive-bridging random-access memory (CBRAM). [0003] US Patent No. 5,835,396 discloses a 3D-M, namely 3D-ROM. Such as Figure 1A As shown, the 3D-M chip 20 includes a substrate layer OK and a plura...

AI Technical Summary

Problems solved by technology

Since the three-dimensional memory array uses a complicated back-end process, and the back-end process of the intermediate circuit is relatively simple, the direct result of blindly integrating the intermediate circuit and the three-dimensional memory array is that the intermediate circuit has to be manufactured with the expensive process of manufacturing the three-dimensional memory array. circuit, which not only cannot reduce the cost, but will increase the cost

In addition, since the intermediate circuit can only use the same number of metal layers as the three-dimensional memory array (for example, only two layers), the design of the intermediate circuit is more troublesome, and the required chip area is larger.

On the other hand, since 3D-M storage elements generally undergo high-temperature processes, the intermediate circuit needs to use high-temperature-resistant interconnection materials, such as tungsten (W), which will degrade the overall performance of 3D-M

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