Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Acid leaching device for silicon material

A technology of acid leaching and silicon materials, which is applied in the production field of silicon ore purification, can solve the problems of long processing time, environmental pollution, and increased installation and maintenance costs of acid leaching devices, so as to reduce installation and maintenance costs, and reduce human and environmental pollution. Harm, the effect of shortening the acid leaching time

Inactive Publication Date: 2014-03-26
成都兴能新材料股份有限公司
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current acid leaching device has the following disadvantages: it is only suitable for cold acid leaching, and the treatment time is long; the gasified acid is not treated, which is easy to cause environmental pollution; If part of it is damaged, it needs to be completely replaced, increasing the installation and maintenance cost of the acid leaching device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Acid leaching device for silicon material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0019] Such as figure 1 The acid leaching device for silicon material shown includes an acid leaching barrel body 1, and a jacket 2 that can pass into a heating medium or a cooling medium is arranged on the outside of the acid leaching barrel body 1, and a medium is set on the jacket 2. Inlet 5 and medium outlet 6; the top of the acid leaching tank body 1 is provided with a feeding port 7 and an acid gas escape port 8; the top of the acid gas escape port 8 is provided with an acid gas filter layer 9, and the acid gas filter layer 9 It consists of a PTFE microporous film layer, a PTFE impregnated treatment layer, an acid-resistant fiber ultra-fine surface layer, and a glass fiber layer in sequence; the top of the acid immersion tank body 1 is fixed with a motor 3, and the motor 3 is connected to a stirring mechanism. The stirring mech...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an acid leaching device for a silicon material and relates to the production field of silicon ore purification. According to the acid leaching device, an outer sleeve for medium access is arranged outside an acid leaching cylinder body, so that the leaching of hot acid is facilitated and the processing time is shortened; a stirring device adopts a split-typed structure and reduces the mounting and maintaining costs of the acid leaching device; an acid gas filter layer arranged on an acid gas outlet performs gasification treatment on the acid gas generated during leaching of hot acid so as to reduce harm of the acid gas to human and the environment.

Description

[0001] technical field [0002] The invention relates to the production field of silicon ore purification, in particular to an acid leaching device for silicon material. Background technique [0003] With the advancement of science and technology, high-tech industries such as optical power supply, electronics industry, optical communication, SiO2 thin film materials, large-scale and ultra-large-scale integrated circuits, lasers, aerospace, military industry and other high-tech industries are developing rapidly, and the demand for high-grade quartz raw materials is very high. big. However, due to the high quality requirements of these special quartz raw materials, the required content is usually greater than 99.9%, or even 99.99%, while the allowable impurity content is very low. Only high-grade natural primary and secondary crystals can meet the requirements. Natural crystal resources are becoming increasingly depleted, especially high-grade natural crystal resources are ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/12
Inventor 王维利范未峰
Owner 成都兴能新材料股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com