The invention belongs to the technical field of back contact cells, and particularly relates to a
graphite boat saturation method suitable for a PECVD tunneling polycrystalline layer
deposition process and application, the
graphite boat saturation method comprises the following steps: depositing a
silicon nitride film on the surface of a
graphite boat, then starting glow for
hydrogen treatment, and then depositing a
silicon oxide film on the graphite boat obtained after
hydrogen treatment; wherein the thickness of the
silicon nitride film is 50-100 nm, and the thickness of the
silicon oxide film is 375-700 nm; the
hydrogen treatment conditions are as follows: the flow rate of the introduced hydrogen is controlled to be 10000 to 20000 sccm, the power is controlled to be 6000 to 10000 W, and the reaction time is 600 to 1800 seconds. According to the graphite boat saturation method, the high-quality tunneling polycrystalline layer can be deposited, the
passivation level can be improved, the conversion efficiency of the battery can be improved, the influence of graphite boat saturation on previous
coating can be solved, the production yield can be improved, and meanwhile, the
pickling time of the graphite boat can be greatly shortened by the graphite boat saturation method.