Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of strong field negative pulse Gunn diode and its preparation method

A technology of Gunn diode and negative pulse, applied in the microwave field, can solve the problem of low output efficiency of Gunn dipole

Active Publication Date: 2016-01-13
无锡炬脉电源科技有限公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is a strong-field negative-pulse Gunn diode, which utilizes an appropriate device structure to realize that the strong-field negative-pulse Gunn diode works in the reverse Gunn dipole domain mode, which can make the existing strong-field negative pulse Gunn diode The output power and efficiency are increased several times, which solves the problem of low output efficiency of the current Gunn Diode

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of strong field negative pulse Gunn diode and its preparation method
  • A kind of strong field negative pulse Gunn diode and its preparation method
  • A kind of strong field negative pulse Gunn diode and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0029] The present invention provides a strong-field negative pulse Gunn diode, which includes an epitaxial wafer, and the epitaxial wafer includes a semi-insulating gallium arsenide substrate 8, an n++ gallium arsenide buffer layer 7, an n-arsenide GaAs active layer 6, n+GaAs control layer 5 and n++GaAs contact layer 4, n++GaAs buffer layer 7 has an anode ohmic contact layer 9 on its upper surface, and an anode ohmic contact layer 9 has an anode on its upper surface Lead 10, a cathode ohmic contact layer 2 is provided on the upper surface of the n++GaAs contact layer 4, a cathode lead 1 is provided on the upper surface of the cathode ohmic contact layer 2, and the rest of the outer layer of the epitaxial wafer except the semi-insulating GaAs substrate 8 is provided There are Si 3 N 4 The passivation layer 3, wherein the n++ gallium arsenid...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a strong-field negative pulse Gunn diode, which includes an epitaxial wafer, and the epitaxial wafer includes a semi-insulating gallium arsenide substrate, an n++ gallium arsenide buffer layer, and an n-gallium arsenide active layer arranged sequentially from bottom to top , n+gallium arsenide control layer and n++gallium arsenide contact layer, wherein the n-gallium arsenide active layer is 5-10 microns long, and the doping concentration is 5×1015-8×1015cm-3, the invention also discloses a The preparation method of the strong-field negative pulse Gunn diode uses an appropriate device structure to realize the Gunn diode working in the reverse Gunn dipole domain mode, which can increase the output power and efficiency of the existing Gunn diode several times, and solves the current problem Gunn diode output inefficiency problem.

Description

technical field [0001] The invention belongs to the field of microwave technology, and in particular relates to a strong field negative pulse Gunn diode, and also relates to a preparation method of the strong field negative pulse Gunn diode. Background technique [0002] The Gunn effect is an effect discovered by J.B. Gunn in 1963. When a certain constant DC voltage is applied to the contact electrode on the opposite side of a small piece of N-type gallium arsenide, microwave oscillation is generated. When a good ohmic contact electrode is made at the two ends of the N-type gallium arsenide sheet, and a DC voltage is applied to make the generated electric field exceed 3kV / cm, due to the negative differential mobility characteristic of gallium arsenide, current oscillation will occur, and its Frequency up to 10 9 Hz, this is the Gunn diode. This phenomenon of generating a high-frequency current in a semiconductor body is called the Gunn effect. [0003] Gunn diodes have v...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L47/02H01L47/00H10N80/10H10N80/00
Inventor 屈光辉
Owner 无锡炬脉电源科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com