A kind of strong field negative pulse Gunn diode and its preparation method
A technology of Gunn diode and negative pulse, applied in the microwave field, can solve the problem of low output efficiency of Gunn dipole
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[0028] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0029] The present invention provides a strong-field negative pulse Gunn diode, which includes an epitaxial wafer, and the epitaxial wafer includes a semi-insulating gallium arsenide substrate 8, an n++ gallium arsenide buffer layer 7, an n-arsenide GaAs active layer 6, n+GaAs control layer 5 and n++GaAs contact layer 4, n++GaAs buffer layer 7 has an anode ohmic contact layer 9 on its upper surface, and an anode ohmic contact layer 9 has an anode on its upper surface Lead 10, a cathode ohmic contact layer 2 is provided on the upper surface of the n++GaAs contact layer 4, a cathode lead 1 is provided on the upper surface of the cathode ohmic contact layer 2, and the rest of the outer layer of the epitaxial wafer except the semi-insulating GaAs substrate 8 is provided There are Si 3 N 4 The passivation layer 3, wherein the n++ gallium arsenid...
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