A kind of strong field negative pulse Gunn diode and its preparation method

A technology of Gunn diode and negative pulse, applied in the microwave field, can solve the problem of low output efficiency of Gunn dipole

Active Publication Date: 2016-01-13
无锡炬脉电源科技有限公司
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  • Abstract
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Problems solved by technology

[0004] The object of the present invention is a strong-field negative-pulse Gunn diode, which utilizes an appropriate device structure to realize that the strong-field negative-pulse Gunn diode works in the reverse Gunn dipole domain mode, which can make the existing strong-field negative pulse Gunn diode The output power and efficiency are increased several times, which solves the problem of low output efficiency of the current Gunn Diode

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  • A kind of strong field negative pulse Gunn diode and its preparation method
  • A kind of strong field negative pulse Gunn diode and its preparation method
  • A kind of strong field negative pulse Gunn diode and its preparation method

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Embodiment Construction

[0028] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0029] The present invention provides a strong-field negative pulse Gunn diode, which includes an epitaxial wafer, and the epitaxial wafer includes a semi-insulating gallium arsenide substrate 8, an n++ gallium arsenide buffer layer 7, an n-arsenide GaAs active layer 6, n+GaAs control layer 5 and n++GaAs contact layer 4, n++GaAs buffer layer 7 has an anode ohmic contact layer 9 on its upper surface, and an anode ohmic contact layer 9 has an anode on its upper surface Lead 10, a cathode ohmic contact layer 2 is provided on the upper surface of the n++GaAs contact layer 4, a cathode lead 1 is provided on the upper surface of the cathode ohmic contact layer 2, and the rest of the outer layer of the epitaxial wafer except the semi-insulating GaAs substrate 8 is provided There are Si 3 N 4 The passivation layer 3, wherein the n++ gallium arsenid...

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Abstract

The invention discloses a strong-field negative pulse Gunn diode, which includes an epitaxial wafer, and the epitaxial wafer includes a semi-insulating gallium arsenide substrate, an n++ gallium arsenide buffer layer, and an n-gallium arsenide active layer arranged sequentially from bottom to top , n+gallium arsenide control layer and n++gallium arsenide contact layer, wherein the n-gallium arsenide active layer is 5-10 microns long, and the doping concentration is 5×1015-8×1015cm-3, the invention also discloses a The preparation method of the strong-field negative pulse Gunn diode uses an appropriate device structure to realize the Gunn diode working in the reverse Gunn dipole domain mode, which can increase the output power and efficiency of the existing Gunn diode several times, and solves the current problem Gunn diode output inefficiency problem.

Description

technical field [0001] The invention belongs to the field of microwave technology, and in particular relates to a strong field negative pulse Gunn diode, and also relates to a preparation method of the strong field negative pulse Gunn diode. Background technique [0002] The Gunn effect is an effect discovered by J.B. Gunn in 1963. When a certain constant DC voltage is applied to the contact electrode on the opposite side of a small piece of N-type gallium arsenide, microwave oscillation is generated. When a good ohmic contact electrode is made at the two ends of the N-type gallium arsenide sheet, and a DC voltage is applied to make the generated electric field exceed 3kV / cm, due to the negative differential mobility characteristic of gallium arsenide, current oscillation will occur, and its Frequency up to 10 9 Hz, this is the Gunn diode. This phenomenon of generating a high-frequency current in a semiconductor body is called the Gunn effect. [0003] Gunn diodes have v...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L47/02H01L47/00
Inventor 屈光辉
Owner 无锡炬脉电源科技有限公司
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