An ion source cleaning device used in coating equipment

Abstract

The invention relates to vacuum coating equipment and particularly relates to an ion source cleaning device applied to coating equipment. The ion source cleaning device comprises a vacuum chamber for cleaning in the coating equipment, wherein the vacuum chamber is a concave containing cavity; an opening in the upper part of the vacuum chamber is opposite to a to-be-cleaned coating substrate; a vacuum mechanism for vacuumizing is arranged at the bottom of the vacuum chamber; an insulated support member is fixedly arranged inside the vacuum chamber; an air distributing hole for providing clean gas is formed in the insulated support member; two electrodes are respectively arranged on the insulated support element at interval, and are respectively electrically connected with an external high-pressure and medium-frequency power supply through respective power lines; the clean gas forms a plasma under the action of two electrodes connected with the high-pressure and medium-frequency power supply in the working process; the coating substrate is arranged within the range of the plasma. After the structure is adopted, the cleaning device disclosed by the invention can remove foreign matters on the surface of the substrate, improves the film-forming quality and increases the adhesive force of a deposition layer on a base.

Description

technical field [0001] The invention relates to vacuum coating equipment, in particular to an ion source cleaning device used in the coating equipment. Background technique [0002] In the prior art, before depositing and forming a film, the substrate needs to be pretreated with plasma, which has been widely used in various PVD equipment, but basically all adopt DC source or radio frequency source, and use a single working gas argon (Ar ), the surface to be treated has defects such as being bombarded too strongly, foreign matter is not removed cleanly, and unsaturated resin polymers on the surface of the substrate cannot be removed. In terms of the structural design of the device, the cooperation with other working mechanisms in the device is not fully considered , the working atmosphere affects each other, and the processed working gas cannot be effectively discharged. Therefore, in the PVD process where the surface of the substrate material is easily damaged and the deposi...

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Problems solved by technology

[0002] In the prior art, before depositing and forming a film, the substrate needs to be pretreated with plasma, which has been widely used in various PVD equipment, but basically all adopt DC source or radio frequency source, and use a single working gas argon (Ar ), the surface to be treated has defects such as being bombarded too strongly, foreign matter is not removed cleanly, and unsaturated resin polymers on the surface of the substrate cannot be removed. In terms of the structural design of the device, the cooperation with other working mechanisms in the device is not fully considered , the working atmosphere affects each other, and the processed working gas cannot be effectively discharged. Therefore, in the PVD process where the surface of the substrate material is easily damaged and the deposition process is very sensitive to the working atmosphere, the original plasma processing mechanism has many limitations.

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