TDDB (time dependent dielectric breakdown) failure early warning circuit

Abstract

The invention provides a TDDB (time dependent dielectric breakdown) failure early warning circuit, comprising a stress voltage generating module 100 of which the input end is accessed with a clock signal for generating a stress voltage, a stress voltage selecting module 200 connected with the output end of the stress voltage generating module 100, and an output module 300 connected with the output end of the stress voltage selecting module, wherein the stress voltage selecting module 200 is used for selecting different stresses to load to a test capacitor 209 so as to accelerate the TDDB failure of the test capacitor; the output module 300 is used for converting input voltage into a standard digital signal and outputting; when the test capacitor is subjected to failure and breakdown, the output module outputs a low level and sends an alarm signal. The TDDB failure early warning circuit has the advantages of flexibility, high reliability, easiness in implementation, promotion and application and the like and can accurately send the alarm signal before an integrated circuit is subjected to the TDDB failure.

Description

technical field [0001] The invention relates to the technical field of reliability of integrated circuits, in particular to a TDDB (Time Dependent Dielectric Breakdown, Time-Dependent Dielectric Breakdown) failure warning circuit. Background technique [0002] The development of integrated circuits follows "Moore's Law", that is, the degree of integration increases sharply at a rate of doubling every eighteen months. Currently, more than one billion circuit elements are integrated on a single chip. One of the main development directions of integrated circuits in the future is to continue to scale down the feature size, and the feature size of the current device has reached 22nm. However, with the continuous shrinking of the feature size of integrated circuits, the thickness of the gate oxide layer is further thinned, but the power supply voltage should not be reduced. Under the high electric field strength, the performance of the gate oxide layer becomes a prominent reliabi...

AI Technical Summary

Problems solved by technology

[0005] (1) Adopt Diskon charge pump, which is difficult to implement in CMOS technology, which is not conducive to popularization and application; (2) only generates a certain stress voltage of a fixed size, cannot realize user-defined functions, and lacks flexibility in use; (3) uses The gate dielectric layer of the transistor at the input end of the comparator is also under stress, which may cause TDDB failure of the early warning circuit’s own transistor, making it difficult to guarantee the reliability of the early warning circuit itself, which in turn will lead to false alarms

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