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Adapter board deep groove capacitor based on tsv process and manufacturing method thereof

A manufacturing method and technology of an adapter board, which are applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of complex process, increased lithography, low capacitance density, etc., and achieve good process compatibility and compact structure. , without the effect of process complexity

Active Publication Date: 2016-06-01
NAT CENT FOR ADVANCED PACKAGING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the capacitance of the adapter board in the industry is still to make a plate capacitor between the interconnection layers of the adapter board. This kind of capacitor generally has a small density of capacitance, and needs to increase the photolithography plate, and the process complexity is relatively high.

Method used

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  • Adapter board deep groove capacitor based on tsv process and manufacturing method thereof
  • Adapter board deep groove capacitor based on tsv process and manufacturing method thereof
  • Adapter board deep groove capacitor based on tsv process and manufacturing method thereof

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Embodiment Construction

[0043] The present invention will be further described below in conjunction with specific drawings and embodiments.

[0044] Such as Figure 13 Shown: In order to obtain high-density capacitors in the interposer board, the interposer board deep trench capacitor based on the TSV process of the present invention includes a substrate 1; the substrate 1 has a first main surface and is connected to the first main surface. The main surface corresponds to the second main surface; the doped region 2 of the substrate 1 is provided with a capacitor slot 3, the capacitor slot 3 passes through the doped region 2, and the slot of the capacitor slot 3 is from the first main The surface extends in the direction of the second main surface, the doped region 2 is wrapped around the upper side wall of the capacitor groove 3; the capacitor groove 3 is provided with a capacitor dielectric body and a capacitor filling conductor 14, and the capacitor filling conductor 14 passes the capacitor The diele...

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Abstract

The invention relates to an adapter plate deep-groove capacitor based on a TSV (Through Silicon Via) process and a manufacturing method thereof. The capacitor comprises a substrate, wherein the substrate is provided with a first main surface and a second main surface which is corresponding to the first main surface; the doping region of the capacitor is internally provided with a capacitor groove which penetrates through the doping region; the port of the capacitor groove is extended in a direction from the first main surface to the second main surface; the doping region is packaged at the periphery of the side wall of the upper part of the capacitor groove; the capacitor groove is internally provided with a capacitor medium body and a capacitor filling conductor; the capacitor filling conductor is contacted with the inner wall of the capacitor groove by virtue of the capacitor medium body; a first capacitor connecting electrode and a second capacitor connecting electrode are arranged above the first main surface of the substrate; the first capacitor connecting electrode is in ohmic contact with the doping region, and the second capacitor connecting electrode is electrically connected with the capacitor filling conductor. The adapter plate deep-groove capacitor is compact in structure, simple and convenient in process step, good in process compatibility, safe and reliable, and the manufacturing method can be used for manufacturing a high-density capacitor on an adapter plate.

Description

Technical field [0001] The invention relates to a deep groove capacitor structure of an adapter plate, in particular to a deep groove capacitor of an adapter plate based on a TSV process and a manufacturing method thereof, belonging to the technical field of semiconductor packaging. Background technique [0002] At present, the transition board technology based on TSV (ThroughSiliconVias) technology has gradually been recognized by the industry, and the related technology is gradually mature. Since the interposer is oriented to system-level packaging, in addition to providing an optimized interconnection structure, the interposer also needs to provide passive components such as capacitors to improve system performance. At present, the capacitor of the transfer board in the industry is still made of flat capacitors between the interconnection layers on the transfer board. Generally, this type of capacitor has a small capacitance and requires an increase in photolithography, and th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/522H01L21/768
Inventor 薛恺于大全
Owner NAT CENT FOR ADVANCED PACKAGING CO LTD